component
3410
Public Made by Adomby adom
TF MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| 3410-etched.glb | 4d ago |
| 3410-etched.step | 4d ago |
| 3410-hero.glb | 4d ago |
| 3410-hero.overlay.json | 4d ago |
| 3410.glb | 4d ago |
| 3410.kicad_mod | 4d ago |
| 3410.kicad_sym | 4d ago |
| 3410.lbr | 4d ago |
| 3410.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
3410
TF · MOSFETs · SOT-23
3410 from TF, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; maximum gate-source voltage is ±12 V, with threshold VGS(th) of 0.5 V min to 1.0 V max at ID = 250 µA. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; continuous source-drain diode current is 1.0 A (IS) per the maximum ratings. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; drain-source voltage is 30 V max and continuous drain current is 5.8 A (pulsed 30 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TF |
| Package | SOT-23 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 30 | V | Ta=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | Ta=25℃ | 1 | |
| Continuous Drain Current | ID | 5.8 | A | Ta=25℃ | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | Pulse Width ≤ 300μs, Duty cycle ≤2% | 1 | ||
| Continuous Source-Drain Diode Current | IS | 1 | A | Ta=25℃ | 1 | ||
| Maximum Power Dissipation | PD | 1.4 | W | Ta=25℃ | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 89 | ℃/W | t ≤10s | 1 | ||
| Junction Temperature | TJ | -55 | 150 | ℃ | 1 | ||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Drain-source breakdown voltage | V(BR)DSS | 30 | V | VGS = 0V, ID = 250µA | 2 | ||
| Gate-source threshold voltage | VGS(th) | 0.5 | 0.8 | 1 | V | VDS =VGS, ID = 250µA | 2 |
| Gate-source leakage | IGSS | -100 | 100 | nA | VDS =0V, VGS =±12V | 2 | |
| Zero gate voltage drain current | IDSS | 100 | A | VDS =24V, VGS =0V | 2 | ||
| Drain-source on-state resistance | RDS(on) | 0.026 | 0.033 | Ω | VGS =4.5V, ID =5A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.035 | 0.042 | Ω | VGS =2.5V, ID =4A | 2 | |
| Drain-source on-state resistance | RDS(on) | 0.023 | 0.028 | Ω | VGS =10V, ID =5.8A | 2 | |
| Forward transconductance | gfs | 10 | S | VDS =5V, ID =5A | 2 | ||
| Continuous source-drain diode current | IS | 2.5 | A | TC=25℃ | 2 | ||
| Body diode voltage | VSD | 0.7 | 1 | V | IS=1.0A | 2 |
CAD (KiCad official)
- Symbol:
3410 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
3410-etched.step/3410-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3410.step/3410.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TF datasheet (6 pp, sha256
2ff38ced1bb23c97, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).