component
3401H
Public Made by Adomby adom
GOFORD MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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3401H
GOFORD · MOSFETs · SOT-23
3401H from GOFORD, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the device operates with gate voltages as low as 2.5V, with VGS limited to ±12V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -5.3A and the body diode forward voltage is -1.2V max at IS=-2A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -30V, continuous ID -5.3A and pulsed IDM -20A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V ID=-250μA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | μA | VDS=-24V,VGS=0V | 1 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS=±12V,VDS=0V | 2 | |
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | 57 | 70 | mΩ | VGS=-10V, ID=-2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 65 | 80 | mΩ | VGS=-4.5V, ID=-2A | 2 | |
| Drain-Source On-State Resistance | RDS(ON) | 85 | 95 | mΩ | VGS=-2.5V, ID=-2A | 2 | |
| Diode Forward Voltage | VSD | -1.2 | V | VGS=0V,IS=-2A | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA=25℃ | 1 | |
| Drain Current-Continuous | ID | -5.3 | A | TA=25℃ | 1 | ||
| Drain Current-Pulsed | IDM | -20 | A | TA=25℃, Note 1 | 1 | ||
| Maximum Power Dissipation | PD | 1.2 | W | TA=25℃ | 1 | ||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 104 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 | ||
| Forward Transconductance | gFS | 10 | S | VDS=-5V,ID=-4.2A | 2 | ||
| Input Capacitance | Clss | 950 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Output Capacitance | Coss | 115 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 75 | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 | ||
| Turn-on Delay Time | td(on) | 7 | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 | ||
| Turn-on Rise Time | tr | 3 | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 | ||
| Turn-Off Delay Time | td(off) | 30 | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 | ||
| Turn-Off Fall Time | tf | 12 | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 | ||
| Total Gate Charge | Qg | 9.5 | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 | ||
| Gate-Source Charge | Qgs | 2 | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 |
CAD (KiCad official)
- Symbol:
3401H - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
3401h-etched.step/3401h-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);3401h.step/3401h.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOFORD datasheet (6 pp, sha256
bea22f247ccc08af, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 3401H
**GOFORD** · MOSFETs · SOT-23
3401H from GOFORD, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; the device operates with gate voltages as low as 2.5V, with VGS limited to ±12V. |
| 2 | S | passive | Source of the P-channel MOSFET; continuous drain current is -5.3A and the body diode forward voltage is -1.2V max at IS=-2A. |
| 3 | D | passive | Drain of the P-channel MOSFET; VDS is rated -30V, continuous ID -5.3A and pulsed IDM -20A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOFORD |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V ID=-250μA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-24V,VGS=0V | 1 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS=±12V,VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -0.7 | -1 | -1.3 | V | VDS=VGS,ID=-250μA | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 57 | 70 | mΩ | VGS=-10V, ID=-2A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 65 | 80 | mΩ | VGS=-4.5V, ID=-2A | 2 |
| Drain-Source On-State Resistance | RDS(ON) | | 85 | 95 | mΩ | VGS=-2.5V, ID=-2A | 2 |
| Diode Forward Voltage | VSD | | | -1.2 | V | VGS=0V,IS=-2A | 2 |
| Drain-Source Voltage | VDS | | | -30 | V | TA=25℃ | 1 |
| Gate-Source Voltage | VGS | -12 | | 12 | V | TA=25℃ | 1 |
| Drain Current-Continuous | ID | | | -5.3 | A | TA=25℃ | 1 |
| Drain Current-Pulsed | IDM | | | -20 | A | TA=25℃, Note 1 | 1 |
| Maximum Power Dissipation | PD | | | 1.2 | W | TA=25℃ | 1 |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | | 104 | ℃/W | Surface Mounted on FR4 Board, t ≤ 10 sec | 1 |
| Forward Transconductance | gFS | | 10 | | S | VDS=-5V,ID=-4.2A | 2 |
| Input Capacitance | Clss | | 950 | | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 |
| Output Capacitance | Coss | | 115 | | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 75 | | PF | VDS=-15V,VGS=0V, F=1.0MHz | 2 |
| Turn-on Delay Time | td(on) | | 7 | | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 |
| Turn-on Rise Time | tr | | 3 | | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 |
| Turn-Off Fall Time | tf | | 12 | | nS | VDD=-15V,ID=-3.2A VGS=-10V,RGEN=6Ω | 2 |
| Total Gate Charge | Qg | | 9.5 | | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 |
| Gate-Source Charge | Qgs | | 2 | | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDS=-15V,ID=-4A,VGS=-4.5V | 2 |
## CAD (KiCad official)
- Symbol: `3401H`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `3401h-etched.step` / `3401h-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `3401h.step` / `3401h.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOFORD datasheet](docs/3401h-datasheet.pdf) (6 pp, sha256 `bea22f247ccc08af`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/3401h-datasheet.pdf)