Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

3400L-B

GOFORD · MOSFETs · SOT-23-3L

3400L-B from GOFORD, in a SOT-23-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET, usable with gate voltages as low as 2.5V and rated at ±12V maximum VGS.
2 S passive Source of the N-channel MOSFET; the drain-source diode forward current is rated at 2.9A maximum.
3 D passive Drain of the N-channel MOSFET, rated at 25V maximum VDS and 5.8A continuous ID (30A pulsed).

Key specifications

Parameter Value
Manufacturer GOFORD
Package SOT-23-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 25 V 1
Gate-Source Voltage VGS -12 12 V 1
Drain Current-Continuous ID 5.8 A 1
Drain Current-Pulsed IDM 30 A Note 1 1
Maximum Power Dissipation PD 1.4 W 1
Operating Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance, Junction-to-Ambient RθJA 1 ℃/W Note 2 1
Drain-Source Breakdown Voltage BVDSS 25 33 V VGS=0V ID=250μA 1
Zero Gate Voltage Drain Current IDSS 1 μA VDS=25V,VGS=0V 2
Gate-Body Leakage Current IGSS -100 100 nA VGS=±12V,VDS=0V 2
Gate Threshold Voltage VGS(th) 0.7 0.9 1.4 V VDS=VGS,ID=250μA 2
Drain-Source On-State Resistance RDS(ON) 45 mΩ VGS=2.5V, ID=4A 2
Drain-Source On-State Resistance RDS(ON) 31 mΩ VGS=4.5V, ID=2.9A 2
Drain-Source On-State Resistance RDS(ON) 28 35 mΩ VGS=10V, ID=2.9A 2
Forward Transconductance gFS 10 S VDS=5V,ID=2.9A 2
Diode Forward Voltage VSD 0.75 1.2 V VGS=0V,IS=2.9A 2
Diode Forward Current IS 2.9 A 2

CAD (KiCad official)

  • Symbol: 3400L-B
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3L (KiCad packages3D, STEP)
  • 3D model files: 3400l-b-etched.step / 3400l-b-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3400l-b.step / 3400l-b.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: GOFORD datasheet (4 pp, sha256 d8cf320ef6ea54fb, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF