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Contents

README

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30P06-VB

VBsemi Elec · MOSFETs · TO-252

30P06-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V and threshold is -1.5 V to -3 V at ID = -250 µA.
2 D passive Drain, shown as the center pin and connected to the exposed tab; VDS rating is -60 V and continuous ID is -50 A at TC = 25 °C.
3 S passive Source; continuous body-diode current is -40 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -50 A TJ = 175 °C; TC = 25 °C 1
Continuous Drain Current ID -40 A TJ = 175 °C; TC = 125 °C 1
Pulsed Drain Current IDM -160 A 1
Avalanche Current IAS -50 A 1
Single Pulse Avalanche Energy EAS 125 mJ L = 0.1 mH 1
Power Dissipation PD 113 W TC = 25 °C 1
Power Dissipation PD 2.5 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (t ≤ 10 s) RthJA 15 18 °C/W t ≤ 10 s 1
Junction-to-Ambient Thermal Resistance (steady state) RthJA 40 50 °C/W Steady state 1
Junction-to-Case Thermal Resistance RthJC 0.82 1.1 °C/W 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1.5 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -100 µA VDS = -60 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -50 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.02 Ω VGS = -10 V, ID = -17 A 2
Drain-Source On-State Resistance RDS(on) 0.03 Ω VGS = -10 V, ID = -40 A, TJ = 125 °C 2
Drain-Source On-State Resistance RDS(on) 0.035 Ω VGS = -10 V, ID = -40 A, TJ = 150 °C 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = -4.5 V, ID = -14 A 2
Total Gate Charge Qg 110 165 nC VDS = -30 V, VGS = -10 V, ID = -40 A 2
Turn-On Delay Time td(on) 15 23 ns VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω 2
Rise Time tr 70 105 ns VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω 2
Turn-Off Delay Time td(off) 175 260 ns VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω 2
Fall Time tf 175 260 ns VDD = -30 V, RL = 0.6 Ω, ID ≅ -40 A, VGEN = -10 V, RG = 6 Ω 2
Continuous Current (source-drain diode) IS -40 A TC = 25 °C 2
Pulsed Current (source-drain diode) ISM -80 A 2
Forward Voltage VSD -1 -1.6 V IF = -40 A, VGS = 0 V 2
Reverse Recovery Time trr 45 70 ns IF = -40 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 30P06-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 30p06-vb-etched.step / 30p06-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 30p06-vb.step / 30p06-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 aeff924bc1d6ff77, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF