component
30P03
Public Made by Adomby adom
GOODWORK MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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30P03
GOODWORK · MOSFETs · TO-252
30P03 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-to-source rating of ±20 V and a threshold of -1.0 to -2.5 V. |
| 2 | D | passive | Drain, also the exposed tab, rated for -30 V drain-to-source and -30 A continuous at TC = 25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with a body-diode continuous forward current of -12 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | -30 | A | TC = 25°C | 1 | ||
| Continuous Drain Current | ID | 15 | A | TC = 100°C | 1 | ||
| Pulsed Drain Current | IDM | -48 | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 | ||
| Single Pulsed Avalanche Energy | EAS | 7.8 | mJ | Starting TJ=25C, VDD=-15V, VG=-10V, RG=25ohm, L=0.5mH, IAS=-8A (note 2) | 1 | ||
| Power Dissipation | PD | 30 | W | TC = 25°C | 1 | ||
| Junction & Storage Temperature Range | TJ, TSTG | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction to Ambient | RθJA | 46 | °C/W | Device mounted on a 1 inch² pad of 2oz copper FR4 PCB (note 3) | 1 | ||
| Thermal Resistance, Junction to Case | RθJC | 4.1 | °C/W | 1 | |||
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | V | ID = -250mA, VGS = 0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | mA | VDS = -30V, VGS = 0V | 2 | ||
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VDS = 0V, VGS = ±20V | 2 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS = VGS, ID = -250mA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | 13.4 | 17.4 | mW | VGS = -10V, ID = -10A | 2 | |
| Static Drain-Source ON-Resistance | RDS(ON) | 17.7 | 23 | mW | VGS = -4.5V, ID = -5A | 2 | |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -12 | A | 2 | |||
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -48 | A | 2 | |||
| Drain to Source Diode Forward Voltage | VSD | -1.2 | V | VGS = 0V, IS = -12A | 2 |
CAD (KiCad official)
- Symbol:
30P03 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
30p03-etched.step/30p03-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);30p03.step/30p03.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: GOODWORK datasheet (7 pp, sha256
2f4d96b02a049492, retrieved 2026-11-04, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 30P03
**GOODWORK** · MOSFETs · TO-252
30P03 from GOODWORK, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with a gate-to-source rating of ±20 V and a threshold of -1.0 to -2.5 V. |
| 2 | D | passive | Drain, also the exposed tab, rated for -30 V drain-to-source and -30 A continuous at TC = 25°C. |
| 3 | S | passive | Source of the P-channel MOSFET, with a body-diode continuous forward current of -12 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | GOODWORK |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | -30 | | | A | TC = 25°C | 1 |
| Continuous Drain Current | ID | | | 15 | A | TC = 100°C | 1 |
| Pulsed Drain Current | IDM | -48 | | | A | Repetitive rating: pulse width limited by maximum junction temperature (note 1) | 1 |
| Single Pulsed Avalanche Energy | EAS | | | 7.8 | mJ | Starting TJ=25C, VDD=-15V, VG=-10V, RG=25ohm, L=0.5mH, IAS=-8A (note 2) | 1 |
| Power Dissipation | PD | | | 30 | W | TC = 25°C | 1 |
| Junction & Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |
| Thermal Resistance, Junction to Ambient | RθJA | | | 46 | °C/W | Device mounted on a 1 inch² pad of 2oz copper FR4 PCB (note 3) | 1 |
| Thermal Resistance, Junction to Case | RθJC | | | 4.1 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | -30 | | | V | ID = -250mA, VGS = 0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | mA | VDS = -30V, VGS = 0V | 2 |
| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VDS = 0V, VGS = ±20V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.6 | -2.5 | V | VDS = VGS, ID = -250mA | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 13.4 | 17.4 | mW | VGS = -10V, ID = -10A | 2 |
| Static Drain-Source ON-Resistance | RDS(ON) | | 17.7 | 23 | mW | VGS = -4.5V, ID = -5A | 2 |
| Maximum Continuous Drain to Source Diode Forward Current | IS | -12 | | | A | | 2 |
| Maximum Pulsed Drain to Source Diode Forward Current | ISM | -48 | | | A | | 2 |
| Drain to Source Diode Forward Voltage | VSD | | | -1.2 | V | VGS = 0V, IS = -12A | 2 |
## CAD (KiCad official)
- Symbol: `30P03`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `30p03-etched.step` / `30p03-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `30p03.step` / `30p03.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [GOODWORK datasheet](docs/30p03-datasheet.pdf) (7 pp, sha256 `2f4d96b02a049492`, retrieved 2026-11-04, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/30p03-datasheet.pdf)