30NF20 TO220-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate-source voltage is limited to ±20 V (VGS) in the absolute maximum ratings.
2	D	passive	Drain is rated for 200 V drain-source voltage (VDS) and a pulsed drain current of 70 A (IDM).
3	S	passive	Source is rated for a continuous source-drain diode current of 45 A (IS) and a pulsed current of 70 A (ISM).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	TO-220AB
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage	VDS			200	V		1
Gate-Source Voltage	VGS	-20		20	V		1
Continuous Drain Current	ID			35	A	TC = 25 °C (TJ = 175 °C)	1
Continuous Drain Current	ID			23	A	TC = 125 °C (TJ = 175 °C)	1
Pulsed Drain Current	IDM			70	A		1
Avalanche Current	IAR			35	A		1
Repetitive Avalanche Energy	EAR			61	mJ	L = 0.1 mH	1
Maximum Power Dissipation	PD			300	W	TC = 25 °C	1
Maximum Power Dissipation	PD			3.75	W	TA = 25 °C	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		175	°C		1
Junction-to-Ambient (PCB Mount)	RthJA			40	°C/W	PCB mount	1
Junction-to-Case (Drain)	RthJC			0.5	°C/W		1
Drain-Source Breakdown Voltage	VDS	200			V	VDS = 0 V, ID = 250 µA	2
Gate-Body Leakage	IGSS	-250		250	nA	VDS = 0 V, VGS = ± 30 V	2
Zero Gate Voltage Drain Current	IDSS			1	µA	VDS = 200 V, VGS = 0 V	2
Zero Gate Voltage Drain Current	IDSS			50	µA	VDS = 200 V, VGS = 0 V, TJ = 125 °C	2
Zero Gate Voltage Drain Current	IDSS			250	µA	VDS = 200 V, VGS = 0 V, TJ = 175 °C	2
On-State Drain Current	ID(on)	70			A	VDS 5 V, VGS = 10 V	2
Drain-Source On-State Resistance	RDS(on)			0.058	Ω	VGS = 10 V, ID = 20 A	2
Drain-Source On-State Resistance	RDS(on)			0.13	Ω	VGS = 10 V, ID = 20 A, TJ = 125 °C	2
Drain-Source On-State Resistance	RDS(on)			0.17	Ω	VGS = 10 V, ID = 20 A, TJ = 175 °C	2
Drain-Source On-State Resistance	RDS(on)			0.07	Ω	VGS = 6 V, ID = 15 A	2
Forward Transconductance	gfs	70			S	VDS = 15 V, ID = 20 A	2
Total Gate Charge	Qg		95	140	nC	VDS = 100 V, VGS = 10 V, ID = 45 A	2
Turn-On Delay Time	td(on)		22	35	ns	VDD = 100 V, RL = 2.78 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω	2
Rise Time	tr		220	330	ns	VDD = 100 V, RL = 2.78 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω	2
Turn-Off Delay Time	td(off)		40	60	ns	VDD = 100 V, RL = 2.78 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω	2
Fall Time	tf		145	220	ns	VDD = 100 V, RL = 2.78 Ω, ID ≅ 45 A, VGEN = 10 V, Rg = 2.5 Ω	2
Forward Voltage	VSD		1	1.5	V	IF = 45 A, VGS = 0 V	2
Reverse Recovery Time	trr		150	225	ns	IF = 45 A, di/dt = 100 A/µs	2
Peak Reverse Recovery Current	IRM(REC)		12	18	A		2
Reverse Recovery Charge	Qrr		0.9	2	µC		2

CAD (KiCad official)

Symbol: 30NF20 TO220-VB
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: 30nf20-to220-vb-etched.step / 30nf20-to220-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 30nf20-to220-vb.step / 30nf20-to220-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (7 pp, sha256 e98e2d3752f805ee, retrieved 2026-11-02, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

30NF20 TO220-VB

Verified 30NF20 TO220-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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