component
30N06
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 10d ago |
| viewers | 17d ago |
| 30n06-etched.glb | 10d ago |
| 30n06-etched.step | 10d ago |
| 30n06-hero.glb | 10d ago |
| 30n06-hero.overlay.json | 10d ago |
| 30n06.glb | 17d ago |
| 30n06.kicad_mod | 17d ago |
| 30n06.kicad_sym | 17d ago |
| 30n06.lbr | 17d ago |
| 30n06.step | 17d ago |
| package.json | 10d ago |
| page.json | 10d ago |
| README.md | 10d ago |
30N06
UMW · MOSFETs · TO-252
30N06 from UMW, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | GATE terminal of the 60V N-channel MOSFET; the datasheet's absolute maximum gate-source voltage is VGS ±20 V. |
| 2 | D | passive | DRAIN terminal; the datasheet rates the drain-source voltage at VDS = 60 V and continuous drain current at ID = 30 A (TC=25°C). |
| 3 | S | passive | SOURCE terminal; gate-source voltage VGS is specified with respect to this pin. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UMW |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 60 | V | TA=25°C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current-Continuous | ID | 30 | A | TC=25°C | 1 | ||
| Drain Current-Continuous | ID | 20 | A | TC=100°C | 1 | ||
| Drain Current-Pulsed | IDM | 120 | A | Note1: repetitive rating, pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Energy | EAS | 72 | mJ | Note4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C | 1 | ||
| Maximum Power Dissipation | PD | 55 | W | TC=25°C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Junction Temperature Range | TJ | -55 | 150 | °C | 1 | ||
| Thermal Resistance, Junction-to-Case | RθJC | 2.7 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, IDS=250µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=60V, VGS=0V | 3 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 3 | |
| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, IDS=250µA | 3 |
| Drain-Source On-State Resistance | RDS(ON) | 23 | mΩ | VGS=10V, IDS=15A | 3 | ||
| Drain-Source On-State Resistance | RDS(ON) | 29 | mΩ | VGS=4.5V, IDS=10A | 3 |
CAD (KiCad official)
- Symbol:
30N06 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
30n06-etched.step/30n06-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);30n06.step/30n06.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UMW datasheet (10 pp, sha256
2847e30fb6b4debc, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).