component
30N06
Public Made by Adomby adom
UMW MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
30n06: specified limits as data (metadata.characteristics, 16 rows from the datasheet)
2 files changed
+223−1
README.md+23@@ -21,6 +21,29 @@ | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDS | | | 60 | V | TA=25°C | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current-Continuous | ID | | | 30 | A | TC=25°C | 1 |+| Drain Current-Continuous | ID | | | 20 | A | TC=100°C | 1 |+| Drain Current-Pulsed | IDM | | | 120 | A | Note1: repetitive rating, pulse width limited by maximum junction temperature | 1 |+| Avalanche Energy | EAS | | | 72 | mJ | Note4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C | 1 |+| Maximum Power Dissipation | PD | | | 55 | W | TC=25°C | 1 |+| Storage Temperature Range | TSTG | -55 | | 150 | °C | | 1 |+| Junction Temperature Range | TJ | -55 | | 150 | °C | | 1 |+| Thermal Resistance, Junction-to-Case | RθJC | | 2.7 | | °C/W | | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, IDS=250µA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS=60V, VGS=0V | 3 |+| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VGS=±20V, VDS=0V | 3 |+| Gate Threshold Voltage | VGS(th) | 1 | 1.6 | 2.5 | V | VDS=VGS, IDS=250µA | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | | 23 | mΩ | VGS=10V, IDS=15A | 3 |+| Drain-Source On-State Resistance | RDS(ON) | | | 29 | mΩ | VGS=4.5V, IDS=10A | 3 |+ ## CAD (KiCad official) - Symbol: `30N06`
page.json+200−1@@ -147,6 +147,205 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "2847e30fb6b4debc",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TA=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 30,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TC=100°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current-Pulsed",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 120,+ "conditions": "Note1: repetitive rating, pulse width limited by maximum junction temperature",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "Note4: L=0.5mH, VDD=30V, VG=10V, VGATE=60V, Start TJ=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 55,+ "conditions": "TC=25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Storage Temperature Range",+ "symbol": "TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction Temperature Range",+ "symbol": "TJ",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 2.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, IDS=250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V, VGS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS=±20V, VDS=0V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1,+ "typ": 1.6,+ "max": 2.5,+ "conditions": "VDS=VGS, IDS=250µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 23,+ "conditions": "VGS=10V, IDS=15A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source On-State Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 29,+ "conditions": "VGS=4.5V, IDS=10A",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -188,4 +387,4 @@ "visibility": { "public": true }-}+}