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3040K

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Shenzhen Fuman MOSFETs, TO-252-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3040K

Shenzhen Fuman · MOSFETs · TO-252-2

3040K from Shenzhen Fuman, in a TO-252-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls the channel, with VGS rated at ±20 V maximum and a threshold of 1.0 V min to 2.5 V max at ID=250μA.
2 D passive Drain, the center lead, which is also the exposed tab; VDS is rated at 30 V maximum and continuous ID at 40 A at TC=25℃.
3 S passive Source; the body diode runs from source to drain, with a continuous forward current of 40 A maximum.

Key specifications

Parameter Value
Manufacturer Shenzhen Fuman
Package TO-252-2
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 30 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=30V, VGS=0V 2
Gate Leakage Current, Forward IGSSF 100 nA VDS=0V, VGS=20V 2
Gate Leakage Current, Reverse IGSSR -100 nA VDS=0V, VGS=-20V 2
Gate Threshold Voltage VGS(th) 1 1.6 2.5 V VDS=VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(on) 5.8 7.5 mΩ VGS=10V, ID=20A 2
Static Drain-Source On-Resistance RDS(on) 10.5 13.5 mΩ VGS=4.5V, ID=15A 2
Forward Transconductance gFS 20 S VDS = 5 V, ID = 15 A (Note 3) 2
Maximum Continuous Drain to Source Diode Forward Current IS 40 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 135 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=40A 2
Drain-Source Voltage VDS 30 V TC=25℃ 1
Gate-Source Voltage VGS -20 20 V TC=25℃ 1
Continuous Drain Current ID 40 A TC = 25℃ 1
Continuous Drain Current ID 26 A TC = 100℃ 1
Pulsed Drain Current IDM 135 A note1 1
Single Pulsed Avalanche Energy EAS 80 mJ note2 1
Power Dissipation PD 50 W TC = 25℃ 1
Power Dissipation Derating PD 0.53 W/℃ TC = 25℃ 1
Operating and Storage Temperature Range TJ, TSTG -55 175 ℃ 1
Thermal Resistance, Junction to Case RθJC 1.83 ℃/W 1
Input Capacitance Ciss 1019 pF VDS=15V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 166 pF VDS=15V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 141 pF VDS=15V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 19 nC VDS=15V, ID=20A, VGS=10V 2
Gate-Source Charge Qgs 6.3 nC VDS=15V, ID=20A, VGS=10V 2
Gate-Drain Charge Qgd 4.5 nC VDS=15V, ID=20A, VGS=10V 2
Turn-on Delay Time td(on) 6 ns VDD=15V, ID=12A, VGS=10V, RG=6Ohm 2
Turn-on Rise Time tr 24 ns VDD=15V, ID=12A, VGS=10V, RG=6Ohm 2
Turn-off Delay Time td(off) 28 ns VDD=15V, ID=12A, VGS=10V, RG=6Ohm 2
Turn-off Fall Time tf 27 ns VDD=15V, ID=12A, VGS=10V, RG=6Ohm 2
Body Diode Reverse Recovery Time trr 21 ns IF=12A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 9 nC IF=12A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: 3040K
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2 (KiCad packages3D, STEP)
  • 3D model files: 3040k-etched.step / 3040k-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 3040k.step / 3040k.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Shenzhen Fuman datasheet (4 pp, sha256 ce287992522ba5d0, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF