component

2STR2230

Public Made by Adom

by adom

STMicroelectronics Bipolar (BJT), SOT-23. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2str2230
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2STR2230

STMicroelectronics · Bipolar (BJT) · SOT-23

2STR2230 from STMicroelectronics, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base terminal of the PNP BJT. Drive with negative base current relative to emitter to turn the device on (IB = -100 mA typical for IC = -1 A). VEBO absolute max = -5 V.
2 E passive Emitter terminal of the PNP BJT. Typically tied to the higher-potential supply rail (e.g. VCC) in low-side PNP switch topologies. VBE(sat) around -0.9 V typical at IC = -1 A.
3 C passive Collector terminal of the PNP BJT. Handles the load current up to IC = -1.5 A DC (-3 A peak, tP < 5 ms). VCEO breakdown = -30 V, VCE(sat) = -0.25 V typical at IC = -1 A, IB = -100 mA.

Key specifications

Parameter Value
Manufacturer STMicroelectronics
Package SOT-23
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • 2STR2230

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage (VCE = 0) VCES -30 V 3
Collector-emitter voltage (IB = 0) VCEO -30 V 3
Emitter-base voltage (IC = 0) VEBO -5 V 3
Collector current IC -1.5 A 3
Collector peak current ICM -3 A tP < 5ms 3
Total dissipation Ptot 0.5 W Tamb = 25°C 3
Storage temperature range Tstg -65 150 °C 3
Thermal resistance junction-amb Rthj-amb 250 °C/W Device mounted on PCB area of 1 cm2 3
Collector cut-off current ICBO -0.1 μA IE = 0, VCB = -30 V 4
Emitter cut-off current IEBO -0.1 μA IC = 0, VEB = -4 V 4
Collector-base breakdown voltage V(BR)CBO -30 V IE = 0, IC = -100 μA 4
Collector-emitter breakdown voltage V(BR)CEO -30 V IB = 0, IC = -10 mA; pulse test 300 μs, duty cycle ≤ 1.5 % 4
Emitter-base breakdown voltage V(BR)EBO -5 V IC = 0, IE = -100 μA 4
Collector-emitter saturation voltage VCE(sat) -0.17 V IC = -0.1 A, IB = -1 mA; pulse test 300 μs, duty cycle ≤ 1.5 % 4
Collector-emitter saturation voltage VCE(sat) -0.25 -0.45 V IC = -1 A, IB = -100 mA; pulse test 300 μs, duty cycle ≤ 1.5 % 4
Collector-emitter saturation voltage VCE(sat) -0.42 -0.8 V IC = -2 A, IB = -200 mA; pulse test 300 μs, duty cycle ≤ 1.5 % 4
Base-emitter saturation voltage VBE(sat) -0.9 -1.25 V IC = -1 A, IB = -100 mA; pulse test 300 μs, duty cycle ≤ 1.5 % 4
DC current gain hFE 210 IC = -50 mA, VCE = -2 V; pulse test 300 μs, duty cycle ≤ 1.5 % 4
DC current gain hFE 170 280 560 IC = -0.5 A, VCE = -2 V; pulse test 300 μs, duty cycle ≤ 1.5 % 4
DC current gain hFE 100 IC = -1 A, VCE = -2 V; pulse test 300 μs, duty cycle ≤ 1.5 % 4
DC current gain hFE 70 IC = -1.5 A, VCE = -2 V; pulse test 300 μs, duty cycle ≤ 1.5 % 4
Transition frequency ft 100 MHz IC = -0.1 A, VCE = -5 V, f = 100 MHz 4
Collector-base capacitance CCBO 10 pF IE = 0, VCB = -10 V, f = 1 MHz 4
Turn-on time ton 74 ns Resistive load, IC = -1.5 A, VCC = -10 V, IB1 = -IB2 = -150 mA 4
Turn-off time toff 200 ns Resistive load, IC = -1.5 A, VCC = -10 V, IB1 = -IB2 = -150 mA 4

CAD (KiCad official)

  • Symbol: 2STR2230
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2str2230-etched.step / 2str2230-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2str2230.step / 2str2230.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: STMicroelectronics datasheet (10 pp, sha256 3caa8cc9e22dd941, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF