component
2SK880-GR
Public Made by Adomby adom
TOSHIBA JFETs, SOT-323-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 3h ago |
| viewers | 3h ago |
| 2sk880-gr-etched.glb | 3h ago |
| 2sk880-gr-etched.step | 3h ago |
| 2sk880-gr-hero.glb | 3h ago |
| 2sk880-gr-hero.overlay.json | 3h ago |
| 2sk880-gr.glb | 3h ago |
| 2sk880-gr.kicad_mod | 3h ago |
| 2sk880-gr.kicad_sym | 3h ago |
| 2sk880-gr.lbr | 3h ago |
| 2sk880-gr.step | 3h ago |
| package.json | 3h ago |
| page.json | 3h ago |
| README.md | 3h ago |
2SK880-GR
TOSHIBA · JFETs · SOT-323-3
2SK880-GR from TOSHIBA, in a SOT-323-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | SOURCE | passive | Source terminal of the N-channel junction FET; IDSS is measured at VDS = 10 V, VGS = 0 (GR rank 2.6 to 6.5 mA). |
| 2 | DRAIN | passive | Drain terminal; gate-drain voltage is limited to -50 V and drain power dissipation to 100 mW. |
| 3 | GATE | passive | Gate terminal; gate current is limited to 10 mA, gate-drain voltage to -50 V, and IGSS is -1.0 nA max at VGS = -30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | TOSHIBA |
| Package | SOT-323-3 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain current (GR grade) | IDSS | 2.6 | 6.5 | mA | VDS = 10 V, VGS = 0; IDSS classification GR | 1 | |
| Gate cut-off current | IGSS | -1 | nA | VGS = −30 V, VDS = 0 | 1 | ||
| Gate-drain breakdown voltage | V(BR)GDS | -50 | V | VDS = 0, IG = −100 μA | 1 | ||
| Gate-source cut-off voltage | VGS(OFF) | -1.5 | -0.2 | V | VDS = 10 V, ID = 0.1 μA | 1 | |
| Forward transfer admittance | /Yfs/ | 4 | 15 | mS | VDS = 10 V, VGS = 0, f = 1 kHz | 1 | |
| Gate-drain voltage | VGDS | -50 | V | Ta = 25°C | 1 | ||
| Gate current | IG | 10 | mA | Ta = 25°C | 1 | ||
| Drain power dissipation | PD | 100 | mW | Ta = 25°C | 1 | ||
| Junction temperature | Tj | 125 | °C | Ta = 25°C | 1 | ||
| Storage temperature range | Tstg | -55 | 125 | °C | Ta = 25°C | 1 | |
| Input capacitance | Ciss | 13 | pF | VDS = 10 V, VGS = 0, f = 1 MHz | 1 | ||
| Reverse transfer capacitance | Crss | 3 | pF | VDG = 10 V, ID = 0, f = 1 MHz | 1 | ||
| Noise figure (10 Hz) | NF (1) | 5 | dB | VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA, f = 10 Hz | 1 | ||
| Noise figure (1 kHz) | NF (2) | 1 | dB | VDS = 10 V, RG = 1 kΩ, ID = 0.5 mA, f = 1 kHz | 1 |
CAD (KiCad official)
- Symbol:
2SK880-GR - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323-3 (KiCad packages3D, STEP)
- 3D model files:
2sk880-gr-etched.step/2sk880-gr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk880-gr.step/2sk880-gr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: TOSHIBA datasheet (4 pp, sha256
28d821360cfc842c, retrieved 2026-10-22, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).