main
History Download
Ray Publish 0.1.0 6775e52 2d ago

2SK3586-01-VB

VBsemi Elec · MOSFETs · TO-220AB

2SK3586-01-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with rDS(on) specified at VGS = 10 V.
2 D passive Drain (also the case/tab); drain-source voltage rated 100 V with continuous drain current of 70 A (package limited).
3 S passive Source; connected to the source side of the N-channel MOSFET, with continuous source current IS of 70 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 100 V VDS = 0 V, ID = 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS 250 µA VDS = 100 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) 120 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance rDS(on) 0.023 Ω VGS = 10 V, ID = 30 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 0.037 Ω VGS = 10 V, ID = 30 A, TJ = 175 °C 2
Forward Transconductance gfs 25 S VDS = 15 V, ID = 30 A 2
Gate Resistance Rg 0.5 1.3 3.1 Ω 2
Turn-On Delay Time td(on) 24 35 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Rise Time tr 220 330 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 45 70 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Fall Time tf 200 300 ns VDD = 100 V, RL = 1.5 Ω, ID ≅ 58 A, VGEN = 10 V, Rg = 2.5 Ω 2
Diode Forward Voltage VSD 1 1.5 V IF = 58 A, VGS = 0 V 2
Reverse Recovery Time trr 130 200 ns IF = 30 A, di/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) 8 12 A IF = 30 A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 0.52 1.2 µC IF = 30 A, di/dt = 100 A/µs 2
Drain-Source Voltage VDS 100 V TC = 25 °C 1
Gate-Source Voltage VGS -20 20 V TC = 25 °C 1
Continuous Drain Current ID 35 A TC = 125 °C, TJ = 175 °C 1
Pulsed Drain Current IDM 145 A TC = 25 °C 1
Single Pulse Avalanche Energy EAS 60 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 355 W TC = 25 °C 1
Maximum Power Dissipation PD 3.35 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 40 °C/W PCB Mount 1
Junction-to-Case (Drain) Thermal Resistance RthJC 0.4 °C/W 1
Output Capacitance Coss 210 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 110 pF VGS = 0 V, VDS = 25 V, f = 1 MHz 2
Total Gate Charge Qg 90 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2
Gate-Source Charge Qgs 23 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2
Gate-Drain Charge Qgd 34 nC VDS = 100 V, VGS = 10 V, ID = 58 A 2

CAD (KiCad official)

  • Symbol: 2SK3586-01-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: 2sk3586-01-vb-etched.step / 2sk3586-01-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk3586-01-vb.step / 2sk3586-01-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 80cb3de98dd972f9, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF