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2SK3537-01MR-VB

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK3537-01MR-VB

VBsemi Elec · MOSFETs · TO-220F

2SK3537-01MR-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage VGS is limited to ±20 V.
2 D passive Drain terminal; drain-source voltage VDS is rated 200 V and continuous drain current ID is 20 A at TC = 25 °C.
3 S passive Source terminal; continuous source-drain diode current IS is rated 20 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 20 A TC = 25 °C, VGS at 10 V 1
Continuous Drain Current ID 14 A TC = 100 °C 1
Pulsed Drain Current IDM 72 A 1
Linear Derating Factor 1 W/°C 1
Single Pulse Avalanche Energy EAS 580 mJ 1
Avalanche Current IAR 20 A 1
Repetitive Avalanche Energy EAR 13 mJ 1
Maximum Power Dissipation PD 42 W TC = 25 °C 1
Maximum Power Dissipation PD 13 W TA = 25 °C 1
Peak Diode Recovery dV/dt dV/dt 5 V/ns 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 300 °C for 10 s, 1.6 mm from case 1
Drain-Source Breakdown Voltage V(BR)DSS 200 V VGS = 0 V, ID = 250 μA 2
Gate-Source Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 250 μA 2
Gate-Source Leakage IGSS -100 100 nA VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 25 μA VDS = 200 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 250 μA VDS = 160 V, VGS = 0 V, TJ = 125 °C 2
Forward Transconductance gfs 6.7 S VDS = 50 V, ID = 11 A 2
Total Gate Charge Qg 70 nC ID = 20 A, VDS = 160 V, VGS = 10 V 2
Gate-Source Charge Qgs 13 nC ID = 20 A, VDS = 160 V, VGS = 10 V 2
Gate-Drain Charge Qgd 39 nC ID = 20 A, VDS = 160 V, VGS = 10 V 2
Continuous Source-Drain Diode Current IS 20 A 2
Pulsed Diode Forward Current ISM 72 A 2
Body Diode Voltage VSD 2 V TJ = 25 °C, IS = 20 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 300 610 ns TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs 2
Body Diode Reverse Recovery Charge Qrr 3.4 7.1 μC TJ = 25 °C, IF = 20 A, dI/dt = 100 A/μs 2

CAD (KiCad official)

  • Symbol: 2SK3537-01MR-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 7f332ad87c7bf123, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF