component
2SK3147L-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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2SK3147L-VB
VBsemi Elec · MOSFETs · TO-251
2SK3147L-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate-source voltage is limited to ±20 V (VGS) per the absolute maximum ratings. |
| 2 | D | passive | Drain is connected to the tab and is rated for a drain-source voltage of 100 V (VDS) with continuous drain current of 12 A at TC = 25 °C. |
| 3 | S | passive | Source carries the continuous source-drain diode current IS of 9.2 A stated in the body diode characteristics. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-251 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 12 | A | VGS at 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 7.5 | A | VGS at 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 37 | A | 1 | |||
| Linear Derating Factor | 0.4 | W/°C | 1 | ||||
| Linear Derating Factor (PCB Mount) | 0.025 | W/°C | PCB Mount | 1 | |||
| Single Pulse Avalanche Energy | EAS | 200 | mJ | 1 | |||
| Avalanche Current | IAR | 9.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 6 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 60 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation (PCB Mount) | PD | 3.7 | W | TA = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | For 10 s | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 62 | °C/W | 2 | |||
| Maximum Junction-to-Ambient (PCB Mount) | RthJA | 40 | °C/W | PCB Mount | 2 | ||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0, ID = 250 μA | 2 | ||
| VDS Temperature Coefficient | VDS/TJ | 0.13 | V/°C | Reference to 25 °C, ID = 1 mA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 μA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | μA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | μA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.2 | Ω | VGS = 10 V ID = 5.5 A | 2 | ||
| Forward Transconductance | gfs | 2.7 | S | VDS = 50 V, ID = 5.5 A | 2 | ||
| Input Capacitance | Ciss | 360 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 150 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 34 | pF | VGS = 0 V, VDS = 25 V, f = 1.0 MHz | 2 | ||
| Gate-Source Charge | Qgs | 4.4 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V | 2 | ||
| Gate-Drain Charge | Qgd | 7.7 | nC | VGS = 10 V, ID = 9.2 A, VDS = 80 V | 2 | ||
| Rise Time | tr | 30 | ns | VDD = 50 V, ID = 9.2 A, Rg = 18 Ω, RD = 5.2 Ω, see fig. 10b | 2 | ||
| Turn-Off Delay Time | td(off) | 19 | ns | VDD = 50 V, ID = 9.2 A, Rg = 18 Ω, RD = 5.2 Ω, see fig. 10b | 2 | ||
| Fall Time | tf | 20 | ns | VDD = 50 V, ID = 9.2 A, Rg = 18 Ω, RD = 5.2 Ω, see fig. 10b | 2 | ||
| Internal Drain Inductance | LD | 4.5 | nH | Between lead, 6 mm (0.25") from package and center of die contact | 2 | ||
| Internal Source Inductance | LS | 7.5 | nH | 2 | |||
| Continuous Source-Drain Diode Current | IS | 9.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 37 | A | 2 | |||
| Body Diode Voltage | VSD | 1.8 | V | TJ = 25 °C, IS = 9.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 110 | 260 | ns | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.53 | 1.3 | μC | TJ = 25 °C, IF = 9.2 A, dI/dt = 100 A/μs | 2 |
CAD (KiCad official)
- Symbol:
2SK3147L-VB - Footprint:
Package_TO_SOT_THT:TO-251-3_Vertical - 3D model: TO-251 (KiCad packages3D, STEP)
- 3D model files:
2sk3147l-vb-etched.step/2sk3147l-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3147l-vb.step/2sk3147l-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
e6cdd437386b6021, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).