component
2SK3065B
Public Made by Adomby adom
Cmos(广东场效应半导体) , SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sk3065b-etched.glb | 6d ago |
| 2sk3065b-etched.step | 6d ago |
| 2sk3065b-hero.glb | 6d ago |
| 2sk3065b-hero.overlay.json | 6d ago |
| 2sk3065b.glb | 6d ago |
| 2sk3065b.kicad_mod | 6d ago |
| 2sk3065b.kicad_sym | 6d ago |
| 2sk3065b.lbr | 6d ago |
| 2sk3065b.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SK3065B
Cmos(广东场效应半导体) · IC · SOT-89
2SK3065B from Cmos(广东场效应半导体), in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; drives the MOSFET, with VGS rated ±20 V maximum and threshold VGS(th) of 1 V min to 2.5 V max at ID=250uA. |
| 2 | D | passive | Drain; VDS rated 60 V maximum with continuous drain current of 6 A and pulsed drain current of 18 A. |
| 3 | S | passive | Source; the pin carries the continuous current of 6 A, and the body diode forward voltage is 1.2 V max at IS=2A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Cmos(广东场效应半导体) |
| Package | SOT-89 |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 39 | 45 | mΩ | VGS=10V, ID=5A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 44 | 55 | mΩ | VGS=4.5V, ID=4.5A | 2 | |
| Gate Threshold Voltage | VGS(th) | 1 | 2.5 | V | VGS=VDS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=48V, VGS=0V, TJ=25℃ | 2 | ||
| Gate-Source Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Diode Forward Voltage | VSD | 0.79 | 1.2 | V | VGS=0V, IS=2A | 2 | |
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 6 | A | 1 | |||
| Pulsed Drain Current | IDM | 18 | A | 1 | |||
| Storage Temperature Range | TSTG | 150 | ℃ | 1 | |||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Total Power Dissipation | PD | 1 | W | TA=25℃ | 1 | ||
| Thermal Resistance Junction-ambient | RθJA | 125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SK3065B - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sk3065b-etched.step/2sk3065b-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3065b.step/2sk3065b.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Cmos(广东场效应半导体) datasheet (3 pp, sha256
6c19efc045ec39a2, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).