component
2SK3018DW
Public Made by Adomby adom
YFW MOSFETs, SOT-363. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SK3018DW
YFW · MOSFETs · SOT-363
2SK3018DW from YFW, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30 V, continuous drain current 0.1 A. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage ±20 V max, threshold 0.8 V min to 1.5 V max at VDS=3 V, ID=100 µA. |
| 3 | D2 | passive | Drain of MOSFET 2 (N-channel); VDS 30 V max, continuous drain current 0.1 A. |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30 V, continuous drain current 0.1 A. |
| 5 | G2 | input | Gate of MOSFET 2; gate-source voltage ±20 V max, threshold 0.8 V min to 1.5 V max at VDS=3 V, ID=100 µA. |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel); VDS 30 V max, continuous drain current 0.1 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0V, ID = 10µA | 1 | ||
| Zero Gate Voltage Drain Current | IDSS | 0.2 | µA | VDS = 30V, VGS = 0V | 1 | ||
| Gate-Source Leakage Current | IGSS | -500 | 500 | nA | VGS = ±20V, VDS = 0V | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.8 | 1.5 | V | VDS = 3V, ID = 100µA | 1 | |
| Drain-Source On-Resistance | RDS(on) | 8 | Ω | VGS = 4V, ID = 10mA | 1 | ||
| Drain-Source On-Resistance | RDS(on) | 13 | Ω | VGS = 2.5V, ID = 1mA | 1 | ||
| Drain-Source Voltage | VDS | 30 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | Ta = 25°C | 1 | |
| Continuous Drain Current | ID | 0.1 | A | Ta = 25°C | 1 | ||
| Power Dissipation | PD | 0.35 | W | Ta = 25°C | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Forward Transconductance | gFS | 20 | mS | VDS = 3V, ID = 10mA | 1 | ||
| Input Capacitance | Ciss | 13 | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 | ||
| Output Capacitance | Coss | 9 | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 | ||
| Turn-On Delay Time | td(on) | 15 | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 | ||
| Rise Time | tr | 35 | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 | ||
| Turn-Off Delay Time | td(off) | 80 | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 | ||
| Fall Time | tf | 80 | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 357 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SK3018DW - Footprint:
Package_TO_SOT_SMD:SOT-363_SC-70-6 - 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files:
2sk3018dw-etched.step/2sk3018dw-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk3018dw.step/2sk3018dw.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: YFW datasheet (3 pp, sha256
85a58d9de5e25058, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SK3018DW
**YFW** · MOSFETs · SOT-363
2SK3018DW from YFW, in a SOT-363. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel); drain-source voltage rated 30 V, continuous drain current 0.1 A. |
| 2 | G1 | input | Gate of MOSFET 1; gate-source voltage ±20 V max, threshold 0.8 V min to 1.5 V max at VDS=3 V, ID=100 µA. |
| 3 | D2 | passive | Drain of MOSFET 2 (N-channel); VDS 30 V max, continuous drain current 0.1 A. |
| 4 | S2 | passive | Source of MOSFET 2 (N-channel); drain-source voltage rated 30 V, continuous drain current 0.1 A. |
| 5 | G2 | input | Gate of MOSFET 2; gate-source voltage ±20 V max, threshold 0.8 V min to 1.5 V max at VDS=3 V, ID=100 µA. |
| 6 | D1 | passive | Drain of MOSFET 1 (N-channel); VDS 30 V max, continuous drain current 0.1 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | YFW |
| Package | SOT-363 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0V, ID = 10µA | 1 |
| Zero Gate Voltage Drain Current | IDSS | | | 0.2 | µA | VDS = 30V, VGS = 0V | 1 |
| Gate-Source Leakage Current | IGSS | -500 | | 500 | nA | VGS = ±20V, VDS = 0V | 1 |
| Gate Threshold Voltage | VGS(th) | 0.8 | | 1.5 | V | VDS = 3V, ID = 100µA | 1 |
| Drain-Source On-Resistance | RDS(on) | | | 8 | Ω | VGS = 4V, ID = 10mA | 1 |
| Drain-Source On-Resistance | RDS(on) | | | 13 | Ω | VGS = 2.5V, ID = 1mA | 1 |
| Drain-Source Voltage | VDS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGSS | -20 | | 20 | V | Ta = 25°C | 1 |
| Continuous Drain Current | ID | | | 0.1 | A | Ta = 25°C | 1 |
| Power Dissipation | PD | | | 0.35 | W | Ta = 25°C | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
| Forward Transconductance | gFS | | 20 | | mS | VDS = 3V, ID = 10mA | 1 |
| Input Capacitance | Ciss | | 13 | | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 |
| Output Capacitance | Coss | | 9 | | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 |
| Reverse Transfer Capacitance | Crss | | 4 | | pF | VDS = 5V, VGS = 0V, f = 1MHz | 1 |
| Turn-On Delay Time | td(on) | | 15 | | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 |
| Rise Time | tr | | 35 | | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 |
| Turn-Off Delay Time | td(off) | | 80 | | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 |
| Fall Time | tf | | 80 | | ns | VGS = 5V, VDD = 5V, ID = 10mA, Rg = 10Ω, RL = 500Ω | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA | | 357 | | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `2SK3018DW`
- Footprint: `Package_TO_SOT_SMD:SOT-363_SC-70-6`
- 3D model: SOT-363 (KiCad packages3D, STEP)
- 3D model files: `2sk3018dw-etched.step` / `2sk3018dw-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sk3018dw.step` / `2sk3018dw.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [YFW datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603358399719755776) (3 pp, sha256 `85a58d9de5e25058`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sk3018dw-datasheet.pdf)