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2SK3018-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK3018-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

2SK3018-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the N-channel MOSFET; the datasheet limits the gate-source voltage to VGS = ±20 V (absolute maximum), with VGS(th) typically 1.25 to 3.1 V range as listed in the electrical specifications.
2 S passive Source of the MOSFET; the body diode forward voltage is specified as VSD = 1.3 V max at IS = 100 mA with VGS = 0 V.
3 D passive Drain of the MOSFET; the drain-source voltage is rated at 60 V with continuous drain current ID = 250 mA at TA = 25 °C and pulsed drain current IDM = 800 mA.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 250 mA TA = 25 °C; TJ = 150 °C 1
Continuous Drain Current ID 150 mA TA = 100 °C; TJ = 150 °C 1
Pulsed Drain Current IDM 800 mA 1
Power Dissipation PD 0.3 W TA = 25 °C 1
Power Dissipation PD 0.13 W TA = 100 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage VDS 60 V VGS = 0 V, ID = 10 µA 2
Gate-Threshold Voltage VGS(th) 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Body Leakage IGSS -10 10 µA VDS = 0 V, VGS = ±20 V 2
Gate-Body Leakage IGSS 1 µA VDS = 0 V, VGS = ±15 V 2
Gate-Body Leakage IGSS -150 150 nA VDS = 0 V, VGS = ±10 V 2
Gate-Body Leakage IGSS -1000 1000 nA VDS = 0 V, VGS = ±10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±5 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 500 µA VDS = 60 V, VGS = 0 V, TJ = 125 °C 2
On-State Drain Current ID(on) 500 mA VGS = 10 V, VDS = 7.5 V 2
On-State Drain Current ID(on) 300 mA VGS = 4.5 V, VDS = 10 V 2
Drain-Source On-Resistance RDS(on) 2.8 Ω VGS = 10 V, ID = 200 mA 2
Drain-Source On-Resistance RDS(on) 3.1 Ω VGS = 4.5 V, ID = 150 mA 2
Diode Forward Voltage VSD 1.3 V IS = 100 mA, VGS = 0 V 2
Total Gate Charge Qg 0.4 0.6 nC VDS = 10 V, VGS = 4.5 V, ID ≅ 150 mA 2
Forward Transconductance gfs 100 mS VDS = 10 V, ID = 100 mA 2
Input Capacitance Ciss 25 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 5 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 2 pF VDS = 25 V, VGS = 0 V, f = 1 MHz 2
Turn-On Time td(on) 20 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2
Turn-Off Time td(off) 30 ns VDD = 30 V, RL = 150 Ω, ID ≅ 200 mA, VGEN = 10 V, RG = 10 Ω 2

CAD (KiCad official)

  • Symbol: 2SK3018-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: 2sk3018-vb-etched.step / 2sk3018-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk3018-vb.step / 2sk3018-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 be9e6ac8ad0b04de, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF