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2SK2926STL-E-VB
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VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SK2926STL-E-VB
VBsemi Elec · MOSFETs · TO-252
2SK2926STL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V. |
| 2 | D | passive | Drain terminal, connected to the tab, with continuous drain current of 100 A at TC = 25 °C in the absolute maximum ratings table. |
| 3 | S | passive | Source terminal, with continuous source (diode conduction) current rated at 23 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Pulsed Drain Current | IDM | 100 | A | 1 | |||
| Continuous Source Current (Diode Conduction) | IS | 23 | A | 1 | |||
| Avalanche Current | IAS | 20 | A | 1 | |||
| Single Avalanche Energy | EAS | 20 | mJ | L = 0.1 mH | 1 | ||
| Maximum Power Dissipation | PD | 100 | W | TC = 25 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 18 | 22 | °C/W | t ≤ 10 sec | 1 | |
| Maximum Junction-to-Ambient | RthJA | 40 | 50 | °C/W | Steady State | 1 | |
| Maximum Junction-to-Case | RthJC | 3.2 | 4 | °C/W | 1 | ||
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 | ||
| On-State Drain Current | ID(on) | 50 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.025 | Ω | VGS = 10 V, ID = 15 A | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.055 | Ω | VGS = 10 V, ID = 15 A, TJ = 125 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.069 | Ω | VGS = 10 V, ID = 15 A, TJ = 175 °C | 2 | ||
| Drain-Source On-State Resistance | rDS(on) | 0.03 | Ω | VGS = 4.5 V, ID = 10 A | 2 | ||
| Forward Transconductance | gfs | 20 | S | VDS = 15 V, ID = 15 A | 2 | ||
| Input Capacitance | Ciss | 150 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 140 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 60 | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 | ||
| Total Gate Charge | Qg | 11 | 17 | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 | |
| Gate-Source Charge | Qgs | 3 | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 | ||
| Gate-Drain Charge | Qgd | 3 | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 | ||
| Turn-On Delay Time | td(on) | 8 | 15 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Rise Time | tr | 15 | 25 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 30 | 45 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Fall Time | tf | 25 | 40 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 | |
| Pulsed Current | ISM | 50 | A | 2 | |||
| Diode Forward Voltage | VSD | 1 | 1.5 | V | IF = 15 A, VGS = 0 V | 2 | |
| Reverse Recovery Time | trr | 30 | 60 | ns | IF = 15 A, di/dt = 100 A/µs | 2 |
CAD (KiCad official)
- Symbol:
2SK2926STL-E-VB - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sk2926stl-e-vb-etched.step/2sk2926stl-e-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk2926stl-e-vb.step/2sk2926stl-e-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
84de4410daf75eac, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SK2926STL-E-VB
**VBsemi Elec** · MOSFETs · TO-252
2SK2926STL-E-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with gate-source voltage rated at ±20 V. |
| 2 | D | passive | Drain terminal, connected to the tab, with continuous drain current of 100 A at TC = 25 °C in the absolute maximum ratings table. |
| 3 | S | passive | Source terminal, with continuous source (diode conduction) current rated at 23 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Pulsed Drain Current | IDM | | | 100 | A | | 1 |
| Continuous Source Current (Diode Conduction) | IS | | | 23 | A | | 1 |
| Avalanche Current | IAS | | | 20 | A | | 1 |
| Single Avalanche Energy | EAS | | | 20 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD | | | 100 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 18 | 22 | °C/W | t ≤ 10 sec | 1 |
| Maximum Junction-to-Ambient | RthJA | | 40 | 50 | °C/W | Steady State | 1 |
| Maximum Junction-to-Case | RthJC | | 3.2 | 4 | °C/W | | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 60 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | 2 | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 50 | µA | VDS = 60 V, VGS = 0 V, TJ = 125 °C | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 60 V, VGS = 0 V, TJ = 175 °C | 2 |
| On-State Drain Current | ID(on) | 50 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.025 | Ω | VGS = 10 V, ID = 15 A | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.055 | Ω | VGS = 10 V, ID = 15 A, TJ = 125 °C | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.069 | Ω | VGS = 10 V, ID = 15 A, TJ = 175 °C | 2 |
| Drain-Source On-State Resistance | rDS(on) | | | 0.03 | Ω | VGS = 4.5 V, ID = 10 A | 2 |
| Forward Transconductance | gfs | 20 | | | S | VDS = 15 V, ID = 15 A | 2 |
| Input Capacitance | Ciss | | 150 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Output Capacitance | Coss | | 140 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss | | 60 | | pF | VGS = 0 V, VDS = 25 V, f = 1 MHz | 2 |
| Total Gate Charge | Qg | | 11 | 17 | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 |
| Gate-Source Charge | Qgs | | 3 | | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 |
| Gate-Drain Charge | Qgd | | 3 | | nC | VDS = 30 V, VGS = 10 V, ID = 23 A | 2 |
| Turn-On Delay Time | td(on) | | 8 | 15 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Rise Time | tr | | 15 | 25 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Turn-Off Delay Time | td(off) | | 30 | 45 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Fall Time | tf | | 25 | 40 | ns | VDD = 30 V, RL = 1.3 Ω, ID ≅ 23 A, VGEN = 10 V, Rg = 2.5 Ω | 2 |
| Pulsed Current | ISM | | | 50 | A | | 2 |
| Diode Forward Voltage | VSD | | 1 | 1.5 | V | IF = 15 A, VGS = 0 V | 2 |
| Reverse Recovery Time | trr | | 30 | 60 | ns | IF = 15 A, di/dt = 100 A/µs | 2 |
## CAD (KiCad official)
- Symbol: `2SK2926STL-E-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sk2926stl-e-vb-etched.step` / `2sk2926stl-e-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sk2926stl-e-vb.step` / `2sk2926stl-e-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/2sk2926stl-e-vb-datasheet.pdf) (8 pp, sha256 `84de4410daf75eac`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sk2926stl-e-vb-datasheet.pdf)