component
2SK2911-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SK2911-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
2SK2911-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with threshold VGS(th) of 1.2 V min to 2.8 V max at 250 µA. |
| 2 | S | passive | Source; continuous source-drain diode current is 2.1 A at TC = 25 °C. |
| 3 | D | passive | Drain; drain-source voltage rating is 100 V, with continuous drain current of 2 A at TC = 25 °C and pulsed current of 7 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 7 | A | t = 300 µs | 1 | ||
| Single Pulse Avalanche Current | IAS | 5 | A | L = 0.1 mH | 1 | ||
| Single Pulse Avalanche Energy | EAS | 1.25 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 75 | 100 | °C/W | t = 5 s, surface mounted on 1" x 1" FR4 | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 40 | 50 | °C/W | Steady state | 1 | |
| Drain-Source Breakdown Voltage | VDS | 100 | V | VDS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1.2 | 2.8 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 100 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Total Gate Charge | Qg | 5.2 | 10.4 | nC | VDS = 50 V, VGS = 10 V, ID = 1.6 A | 2 | |
| Total Gate Charge | Qg | 2.9 | 5.8 | nC | VDS = 50 V, VGS = 4.5 V, ID = 1.6 A | 2 | |
| Gate Resistance | Rg | 0.3 | 1.4 | 2.8 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 1.3 A | 2 | |
| Forward Transconductance | gfs | 2 | S | VDS = 20 V, ID = 1.5 A | 2 | ||
| Pulse Diode Forward Current | ISM | 20 | A | 2 |
CAD (KiCad official)
- Symbol:
2SK2911-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
2sk2911-vb-etched.step/2sk2911-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sk2911-vb.step/2sk2911-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
998a472c1b9617c2, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).