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2SK2391-VB
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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SK2391-VB
VBsemi Elec · MOSFETs · TO-220F
2SK2391-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with VGS limited to ±20 V and a threshold of 1.0 to 3.0 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal, rated for VDS of 100 V and continuous drain current of 18 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, with continuous body-diode current of 17 A and pulsed 68 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 100 | V | 1 | |||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Continuous Drain Current | ID | 18 | A | TC = VGS at 10 V, 25 °C | 1 | ||
| Continuous Drain Current | ID | 12 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 68 | A | 1 | |||
| Linear Derating Factor | 0.32 | W/°C | 1 | ||||
| Single Pulse Avalanche Energy | EAS | 720 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 3.7 mH, RG = 25 Ω, IAS = 17 A | 1 | ||
| Repetitive Avalanche Current | IAR | 17 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 4.8 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 48 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | 5.5 | V/ns | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Recommendations (Peak Temperature) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Maximum Junction-to-Ambient | RthJA | 65 | °C/W | 2 | |||
| Maximum Junction-to-Case (Drain) | RthJC | 3.1 | °C/W | 2 | |||
| Drain-Source Breakdown Voltage | VDS | 100 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 100 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 250 | µA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 9.1 | S | VDS = 50 V, ID = 10 A | 2 | ||
| Continuous Source-Drain Diode Current | IS | 17 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | 68 | A | 2 | |||
| Body Diode Voltage | VSD | 2.5 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 180 | 360 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 1.3 | 2.6 | µC | 2 | ||
| VDS Temperature Coefficient | ΔVDS/TJ | 0.13 | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
CAD (KiCad official)
- Symbol:
2SK2391-VB - Footprint:
Package_TO_SOT_THT:TO-220F-3_Vertical - 3D model: TO-220F (KiCad packages3D, STEP)
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
468e9944f34b0040, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SK2391-VB
**VBsemi Elec** · MOSFETs · TO-220F
2SK2391-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET, with VGS limited to ±20 V and a threshold of 1.0 to 3.0 V at ID = 250 µA. |
| 2 | D | passive | Drain terminal, rated for VDS of 100 V and continuous drain current of 18 A at TC = 25 °C. |
| 3 | S | passive | Source terminal, with continuous body-diode current of 17 A and pulsed 68 A. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | | | 100 | V | | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |
| Continuous Drain Current | ID | | | 18 | A | TC = VGS at 10 V, 25 °C | 1 |
| Continuous Drain Current | ID | | | 12 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | | | 68 | A | | 1 |
| Linear Derating Factor | | | | 0.32 | W/°C | | 1 |
| Single Pulse Avalanche Energy | EAS | | | 720 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 3.7 mH, RG = 25 Ω, IAS = 17 A | 1 |
| Repetitive Avalanche Current | IAR | | | 17 | A | | 1 |
| Repetitive Avalanche Energy | EAR | | | 4.8 | mJ | | 1 |
| Maximum Power Dissipation | PD | | | 48 | W | TC = 25 °C | 1 |
| Peak Diode Recovery dV/dt | dV/dt | | | 5.5 | V/ns | | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Soldering Recommendations (Peak Temperature) | | | | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Maximum Junction-to-Ambient | RthJA | | | 65 | °C/W | | 2 |
| Maximum Junction-to-Case (Drain) | RthJC | | | 3.1 | °C/W | | 2 |
| Drain-Source Breakdown Voltage | VDS | 100 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 25 | µA | VDS = 100 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 250 | µA | VDS = 80 V, VGS = 0 V, TJ = 150 °C | 2 |
| Forward Transconductance | gfs | 9.1 | | | S | VDS = 50 V, ID = 10 A | 2 |
| Continuous Source-Drain Diode Current | IS | | | 17 | A | | 2 |
| Pulsed Diode Forward Current | ISM | | | 68 | A | | 2 |
| Body Diode Voltage | VSD | | | 2.5 | V | TJ = 25 °C, IS = 17 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr | | 180 | 360 | ns | TJ = 25 °C, IF = 17 A, dI/dt = 100 A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 1.3 | 2.6 | µC | | 2 |
| VDS Temperature Coefficient | ΔVDS/TJ | | 0.13 | | V/°C | Reference to 25 °C, ID = 1 mA | 2 |
## CAD (KiCad official)
- Symbol: `2SK2391-VB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/2sk2391-vb-datasheet.pdf) (8 pp, sha256 `468e9944f34b0040`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sk2391-vb-datasheet.pdf)