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2SK209-VB

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VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK209-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

2SK209-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET, with a gate-source voltage limit of ±20 V and a threshold of -1 V to -3 V at ID = -250 µA.
2 S passive Source of the P-channel MOSFET, used for high-side switching, with continuous drain current of -500 mA at TA = 25 °C.
3 D passive Drain of the P-channel MOSFET, with a maximum drain-source voltage of -60 V and pulsed drain current of -1500 mA.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -500 mA TA = 25 °C 1
Continuous Drain Current ID -350 mA TA = 100 °C 1
Pulsed Drain Current IDM -1500 mA Pulse width limited by maximum junction temperature 1
Power Dissipation PD 460 mW TA = 25 °C 1
Power Dissipation PD 240 mW TA = 100 °C 1
Maximum Junction-to-Ambient RthJA 350 °C/W Surface mounted on FR4 board 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 10 µA 2
Gate-Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS 10 µA VDS = 0 V, VGS = ± 20 V 2
Gate-Body Leakage IGSS 200 nA VDS = 0 V, VGS = ± 10 V 2
Gate-Body Leakage IGSS 500 nA VDS = 0 V, VGS = ± 10 V, TJ = 85 °C 2
Gate-Body Leakage IGSS 100 nA VDS = 0 V, VGS = ± 5 V 2
Zero Gate Voltage Drain Current IDSS -25 nA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -250 nA VDS = - 60 V, VGS = 0 V, TJ = 85 °C 2
On-State Drain Current ID(on) -50 mA VGS = - 10 V, VDS = - 4.5 V 2
On-State Drain Current ID(on) -600 mA VGS = - 10 V, VDS = - 10 V 2
Drain-Source On-Resistance RDS(on) 4 Ω VGS = - 4.5 V, ID = - 25 mA 2
Drain-Source On-Resistance RDS(on) 3 Ω VGS = - 10 V, ID = - 100 mA 2
Drain-Source On-Resistance RDS(on) 9 Ω VGS = - 10 V, ID = - 100 mA, TJ =125 °C 2
Forward Transconductance gfs 80 mS VDS = - 10 V, ID = - 100 mA 2
Diode Forward Voltage VSD -1.4 V IS = - 100 mA, VGS = 0 V 2
Total Gate Charge Qg 2 nC VDS = - 30 V, VGS = - 15 V, ID ≈ - 100 mA 2
Gate-Source Charge Qgs 1.2 nC VDS = - 30 V, VGS = - 15 V, ID ≈ - 100 mA 2
Gate-Drain Charge Qgd 0.8 nC VDS = - 30 V, VGS = - 15 V, ID ≈ - 100 mA 2
Input Capacitance Ciss 23 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 10 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 5 pF VDS = - 25 V, VGS = 0 V, f = 1 MHz 2
Turn-On Time td(on) 20 ns VDD = - 25 V, RL = 150 Ω, ID ≈ - 200 mA, VGEN = - 10 V, Rg = 10 Ω 2
Turn-Off Time td(off) 35 ns VDD = - 25 V, RL = 150 Ω, ID ≈ - 200 mA, VGEN = - 10 V, Rg = 10 Ω 2

CAD (KiCad official)

  • Symbol: 2SK209-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
  • 3D model files: 2sk209-vb-etched.step / 2sk209-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk209-vb.step / 2sk209-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 cf575b6a6e03d0a1, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF