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2SK1485-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SK1485-VB

VBsemi Elec · MOSFETs · SOT-89

2SK1485-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) 1.2 V min to 3 V max at ID = 250 µA.
2 D passive Drain, also connected to the exposed tab; drain-source voltage 100 V max, continuous drain current 4.2 A at TC = 25 °C.
3 S passive Source; continuous source-drain diode current 2.1 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 4.2 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID 3.5 A TC = 70 °C 1
Continuous Drain Current ID 3.2 A TA = 25 °C 1
Continuous Drain Current ID 2.8 A TA = 70 °C 1
Pulsed Drain Current IDM 15 A t = 300 µs 1
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 1 A TA = 25 °C 1
Single Pulse Avalanche Current IAS 3 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 0.45 mJ 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t = 5 s 1
Maximum Junction-to-Ambient (steady state) RthJA 166 °C/W Steady state (note d) 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady state 1
Drain-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0 V, ID = 250 µA 2
VDS Temperature Coefficient VDS/TJ 59 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -4.8 mV/°C 2
Gate-Source Threshold Voltage VGS(th) 1.2 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 100 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 5 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.12 Ω VGS = 6 V, ID = 1 A 2
Drain-Source On-State Resistance RDS(on) 0.125 Ω VGS = 4.5 V, ID = 1 A 2
Forward Transconductance gfs 5 S VDS = 20 V, ID = 2 A 2
Input Capacitance Ciss 196 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 67 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 14 pF VDS = 50 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 5.2 10.4 nC VDS = 50 V, VGS = 10 V, ID = 2.2 A 2
Total Gate Charge Qg 2.9 5.8 nC VDS = 50 V, VGS = 4.5 V, ID = 2.2 A 2
Gate-Source Charge Qgs 1 nC VDS = 50 V, VGS = 4.5 V, ID = 2.2 A 2
Gate-Drain Charge Qgd 1.4 nC VDS = 50 V, VGS = 4.5 V, ID = 2.2 A 2
Gate Resistance Rg 0.9 4.3 8.6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 40 60 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 68 102 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 14 21 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 20 30 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 8 16 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 20 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 7 14 ns VDD = 50 V, RL = 27.7 Ω, ID = 1.8 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM 8 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 1.8 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 21 32 nC IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 17 ns IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 6 ns IF = 1.8 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: 2SK1485-VB
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sk1485-vb-etched.step / 2sk1485-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sk1485-vb.step / 2sk1485-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 0ff784b817838a34, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF