# 2SK1420-VB

**VBsemi Elec** · MOSFETs · TO-220F

2SK1420-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated at ±20 V (VGS), and the device is specified with VGS = 10 V for RDS(on). |
| 2 | D | passive | Drain terminal; rated for a drain-source voltage of 60 V and a continuous drain current of 45 A at TC = 25 °C. |
| 3 | S | passive | Source terminal; reference for the ±20 V gate-source rating, with a pulsed diode forward current of 120 A stated for the body diode. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-220F |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (TC = 25 °C) | ID |  |  | 45 | A | VGS at 10 V, TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 52 | W | TC = 25 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Drain-Source Voltage | VDS |  |  | 60 | V |  | 1 |
| Pulsed Drain Current | IDM |  |  | 220 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 100 | mJ | VDD = 25 V, starting TJ = 25 °C, L = 129 µH, RG = 25 Ω, IAS = 30 A | 1 |
| Linear Derating Factor |  |  |  | 0.32 | W/°C |  | 1 |
| Peak Diode Recovery dV/dt | dV/dt |  |  | 4.5 | V/ns | ISD ≤ 52 A, dI/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 |
| Soldering Recommendations (Peak Temperature) |  |  |  | 300 | °C | for 10 s, 1.6 mm from case | 1 |
| Mounting Torque (6-32 or M3 screw) |  |  |  | 10 | lbf · in |  | 1 |
| Mounting Torque (6-32 or M3 screw) |  |  |  | 1.1 | N · m |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 65 | °C/W |  | 2 |
| Maximum Junction-to-Case (Drain) | RthJC |  |  | 3.1 | °C/W |  | 2 |
| Drain-Source Breakdown Voltage | VDS | 60 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 |  | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 25 | µA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 250 | µA | VDS = 48 V, VGS = 0 V, TJ = 150 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.027 | Ω | VGS = 10 V, ID = 18 A | 2 |
| Forward Transconductance | gfs | 15 |  |  | S | VDS = 25 V, ID = 18 A | 2 |
| Gate-Source Charge | Qgs |  |  | 27 | nC |  | 2 |
| Gate-Drain Charge | Qgd |  |  | 46 | nC |  | 2 |
| Pulsed Diode Forward Current | ISM |  |  | 120 | A |  | 2 |
| Body Diode Voltage | VSD |  |  | 2.5 | V | TJ = 25 °C, IS = 30 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 140 | 300 | ns | TJ = 25 °C, IF = 52 A, dI/dt = 100 A/µs | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 1.2 | 2.8 | µC |  | 2 |

## CAD (KiCad official)

- Symbol: `2SK1420-VB`
- Footprint: `Package_TO_SOT_THT:TO-220F-3_Vertical`
- 3D model: TO-220F (KiCad packages3D, STEP)

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/2sk1420-vb-datasheet.pdf) (8 pp, sha256 `d27ba84ea7aa7824`, retrieved 2026-11-07, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sk1420-vb-datasheet.pdf)