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2SJ626-T1B-A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SJ626-T1B-A-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
2SJ626-T1B-A-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, with gate-source voltage limited to ±20 V and a threshold of -1.0 to -2.5 V. |
| 2 | S | passive | Source of the P-channel MOSFET, carrying continuous source-drain diode current up to -5.2 A at TC = 25 °C. |
| 3 | D | passive | Drain of the P-channel MOSFET, rated for -60 V drain-source voltage and -5.2 A continuous current at TC = 25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | -60 | V | VGS = 0 V, ID = - 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | -1 | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -100 | µA | VDS = - 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (150 °C) | IDSS | -500 | µA | VDS = - 48 V, VGS = 0 V, TJ = 150 °C | 2 | ||
| Forward Transconductance | gfs | 1.6 | S | VDS = - 25 V, ID = - 3.2 A | 2 | ||
| Body Diode Voltage | VSD | -5.5 | V | TJ = 25 °C, IS = - 5.2 A, VGS = 0 V | 2 | ||
| Body Diode Reverse Recovery Time | trr | 80 | 160 | ns | TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µs | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 0.096 | 0.19 | µC | TJ = 25 °C, IF = - 4.7 A, dI/dt = 100 A/µs | 2 | |
| Continuous Source-Drain Diode Current | IS | -5.2 | A | 2 | |||
| Pulsed Diode Forward Current | ISM | -21 | A | 2 | |||
| Total Gate Charge | Qg | 12 | nC | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | 2 | ||
| Gate-Source Charge | Qgs | 3.8 | nC | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | 2 | ||
| Gate-Drain Charge | Qgd | 5.1 | nC | VGS = - 10 V, ID = - 4.7 A, VDS = - 48 V | 2 | ||
| Junction-to-Ambient Thermal Resistance | RthJA | 65 | °C/W | 2 | |||
| Junction-to-Case (Drain) Thermal Resistance | RthJC | 5.5 | °C/W | 2 | |||
| Drain-Source Voltage | VDS | -60 | V | TC = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TC = 25 °C | 1 | |
| Continuous Drain Current | ID | -5.2 | A | VGS at - 10 V, TC = 25 °C | 1 | ||
| Continuous Drain Current (100 °C) | ID | -3.8 | A | VGS at - 10 V, TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -21 | A | TC = 25 °C | 1 | ||
| Single Pulse Avalanche Energy | EAS | 120 | mJ | VDD = - 25 V, starting TJ = 25 °C, L = 5.0 mH, RG = 25 Ω, IAS = - 5.3 A | 1 | ||
| Repetitive Avalanche Current | IAR | -5.2 | A | 1 | |||
| Repetitive Avalanche Energy | EAR | 2.7 | mJ | 1 | |||
| Maximum Power Dissipation | PD | 27 | W | TC = 25 °C | 1 | ||
| Peak Diode Recovery dV/dt | dV/dt | -4.5 | V/ns | ISD ≤ - 6.7 A, dI/dt ≤ 90 A/µs, VDD ≤ VDS, TJ ≤ 175 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Soldering Temperature (Peak) | 300 | °C | for 10 s, 1.6 mm from case | 1 | |||
| Linear Derating Factor | 0.18 | W/°C | 1 | ||||
| VDS Temperature Coefficient | ΔVDS/TJ | -0.06 | V/°C | Reference to 25 °C, ID = - 1 mA | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.05 | Ω | VGS = - 10 V, ID = - 3.2 A | 2 | ||
| Input Capacitance | Ciss | 270 | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 | ||
| Output Capacitance | Coss | 170 | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 31 | pF | VGS = 0 V, VDS = - 25 V, f = 1.0 MHz | 2 | ||
| Turn-On Delay Time | td(on) | 11 | ns | VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 | ||
| Rise Time | tr | 63 | ns | VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 | ||
| Fall Time | tf | 31 | ns | VDD = - 30 V, ID = - 4.7 A, RG = 24 Ω, RD = 4.0 Ω | 2 |
CAD (KiCad official)
- Symbol:
2SJ626-T1B-A-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236) (KiCad packages3D, STEP)
- 3D model files:
2sj626-t1b-a-vb-etched.step/2sj626-t1b-a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sj626-t1b-a-vb.step/2sj626-t1b-a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
f913360838d8d2a7, retrieved 2026-10-26, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).