# 2SJ520-VB

**VBsemi Elec** · MOSFETs · TO-252

2SJ520-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET; VGS absolute maximum ±20 V, threshold VGS(th) -1.0 to -2.5 V at ID = -250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET (also the TO-252 tab); VDS maximum -30 V, RDS(on) 0.033 Ω at VGS = -10 V. |
| 3 | S | passive | Source of the P-channel MOSFET; continuous source-drain diode current -4.1 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM |  |  | -112 | A | TA = 25 °C | 1 |
| Avalanche Current | IAS |  |  | -20 | A | L = 0.1 mH | 1 |
| Single-Pulse Avalanche Energy | EAS |  |  | 20 | mJ | L = 0.1 mH | 1 |
| Maximum Power Dissipation | PD |  |  | 25 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 20 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 2.7 | W | TA = 25 °C, a, b | 1 |
| Maximum Power Dissipation | PD |  |  | 1.7 | W | TA = 70 °C, a, b | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 38 | 46 | °C/W | t ≤ 10 s, a, c | 1 |
| Maximum Junction-to-Foot | RthJF |  | 20 | 25 | °C/W | Steady State | 1 |
| Drain-Source Breakdown Voltage | VDS | -30 |  |  | V | VGS = 0 V, ID = - 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -1 |  | -2.5 | V | VDS = VGS, ID = - 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ± 25 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = - 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -30 |  |  | A | VDS ≥ - 10 V, VGS = - 10 V | 2 |
| Total Gate Charge | Qg |  | 27 | 43 | nC | VDS = - 15 V, VGS = - 10 V, ID = - 10 A | 2 |
| Total Gate Charge | Qg |  | 19 | 25 | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |
| Gate Resistance | Rg | 0.5 | 2.2 | 4.4 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 13 | 25 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 12 | 24 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 40 | 70 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 9 | 18 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω | 2 |
| Turn-On Delay Time | td(on) |  | 48 | 80 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Rise Time | tr |  | 92 | 160 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Turn-Off Delay Time | td(off) |  | 34 | 60 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Fall Time | tf |  | 19 | 35 | ns | VDD = - 15 V, RL = 1.5 Ω, ID ≅ - 10 A, VGEN = - 4.5 V, Rg = 1 Ω | 2 |
| Body Diode Voltage | VSD |  | -0.75 | -1.2 | V | IS = - 3 A, VGS = 0 V | 2 |
| Body Diode Reverse Recovery Time | trr |  | 27 | 45 | ns | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 16 | 27 | nC | IF = - 10 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.033 |  | Ω | VGS = - 10 V, ID = - 10 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  | 0.046 |  | Ω | VGS = - 4.5 V, ID = - 8 A | 2 |
| Forward Transconductance | gfs |  | 28 |  | S | VDS = - 10 V, ID = - 10 A | 2 |
| Input Capacitance | Ciss |  | 1350 |  | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Output Capacitance | Coss |  | 255 |  | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 190 |  | pF | VDS = - 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs |  | 6 |  | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |
| Gate-Drain Charge | Qgd |  | 12 |  | nC | VDS = - 15 V, VGS = - 4.5 V, ID = - 10 A | 2 |

## CAD (KiCad official)

- Symbol: `2SJ520-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sj520-vb-etched.step` / `2sj520-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sj520-vb.step` / `2sj520-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/2sj520-vb-datasheet.pdf) (9 pp, sha256 `b137a52e1e0ab90e`, retrieved 2026-10-26, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sj520-vb-datasheet.pdf)