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2SJ518-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SJ518-VB

VBsemi Elec · MOSFETs · SOT-89

2SJ518-VB from VBsemi Elec, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V and threshold is -1.2 V min to -2.5 V max at ID = -250 µA.
2 D passive Drain of the P-channel MOSFET, also connected to the tab; VDS is -60 V max and continuous drain current is -6.5 A at TC = 25 °C.
3 S passive Source of the P-channel MOSFET; continuous source-drain diode current is 6.9 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1.2 2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -25 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.058 Ω VGS = -10 V, ID = -3 A 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = -4.5 V, ID = -2 A 2
Total Gate Charge Qg 56 nC VDS = -30 V, VGS = -10 V, ID = -5 A 2
Total Gate Charge Qg 30 nC VDS = -30 V, VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time td(on) 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 15 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 110 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 60 ns VDD = -2 V, RL = 2 Ω, ID ≅ -5 A, VGEN = -10 V, Rg = 1 Ω 2
Body Diode Voltage VSD -1 -1.5 V IS = -3 A 2
Body Diode Reverse Recovery Time trr 68 ns IF = -5 A, di/dt = 10 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 120 nC 2
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM -20 A 1
Avalanche Current Pulse IAS -4.5 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 10.1 mJ 1
Continuous Source-Drain Diode Current (TC = 25 °C) IS 6.9 A TC = 25 °C 1
Continuous Source-Drain Diode Current (TA = 25 °C) IS 3.5 A TA = 25 °C 1
Maximum Power Dissipation PD 10.4 W TC = 25 °C 1
Maximum Power Dissipation PD 6.6 W TC = 70 °C 1
Maximum Power Dissipation PD 2.1 W TA = 25 °C 1
Maximum Power Dissipation PD 1.1 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 33 40 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.98 1.2 °C/W Steady State 1

CAD (KiCad official)

  • Symbol: 2SJ518-VB
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sj518-vb-etched.step / 2sj518-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sj518-vb.step / 2sj518-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 add1874304fc903a, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF