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2SJ182L-VB

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SJ182L-VB

VBsemi Elec · MOSFETs · TO-251

2SJ182L-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; the gate-source voltage is rated ±20 V in the absolute maximum ratings.
2 D passive Drain terminal; the drain-source voltage is rated -60 V, with continuous drain current of -20 A at TC = 25 °C.
3 S passive Source terminal; the continuous source-drain diode current IS is rated -66 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -60 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -20 A TC = 25 °C 1
Continuous Drain Current ID -16 A TC = 70 °C 1
Continuous Drain Current ID -11 A TA = 25 °C 1
Continuous Drain Current ID -9 A TA = 70 °C 1
Pulsed Drain Current IDM -100 A 1
Continuous Source-Drain Diode Current IS -29 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -2.1 A TA = 25 °C 1
Maximum Power Dissipation PD 35 W TC = 25 °C 1
Maximum Power Dissipation PD 20 W TC = 70 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 70 °C 1
Single Pulse Avalanche Energy EAS 101 mJ L = 0.1 mH 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient Steady State RthJA 33 40 °C/W Steady state 1
Maximum Junction-to-Case Steady State RthJC 0.98 1.2 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = -250 µA 2
Gate-Source Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = -60 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -120 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.066 Ω VGS = -10 V, ID = -30 A 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = -4.5 V, ID = -20 A 2
Forward Transconductance gfs 20 S VDS = -15 V, ID = -50 A 2
Body Diode Voltage VSD -1 -1.5 V IS = -30 A 2
Body Diode Reverse Recovery Time trr 45 68 ns IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 59 120 nC IF = -50 A, di/dt = 100 A/µs, TJ = 25 °C 2
Turn-On Delay Time td(on) 10 15 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Rise Time tr 7 15 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 110 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 40 60 ns VDD = -2 V, RL = 2 Ω, ID = -10 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -66 A TC = 25 °C 2
Pulse Diode Forward Current ISM -150 A 2
Input Capacitance Ciss 1200 pF VDS = -25 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 200 pF VDS = -25 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 150 pF VDS = -25 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 40 nC VDS = -30 V, VGS = -10 V, ID = -55 A 2
Total Gate Charge Qg 38 nC VDS = -30 V, VGS = -4.5 V, ID = -55 A 2
Gate-Source Charge Qgs 16 nC 2
Gate-Drain Charge Qgd 19 nC 2
Gate Resistance Rg 5.2 Ω f = 1 MHz 2
VDS Temperature Coefficient VDS/TJ 68 mV/°C ID = -250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.2 mV/°C 2
Reverse Recovery Fall Time ta 29 ns 2
Reverse Recovery Rise Time tb 16 ns 2

CAD (KiCad official)

  • Symbol: 2SJ182L-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: 2sj182l-vb-etched.step / 2sj182l-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sj182l-vb.step / 2sj182l-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 7c506d4908f5e72d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF