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2SJ172-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SJ172-VB

VBsemi Elec · MOSFETs · TO-220AB

2SJ172-VB from VBsemi Elec, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate-source voltage is rated ±20 V (VGS).
2 D passive Continuous drain current is rated -40 A at TC = 25 °C with a drain-source voltage of -60 V.
3 S passive Continuing source current (diode conduction) is rated -30 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220AB
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 40 A TC = 25 °C (TJ = 175 °C) 1
Continuous Drain Current ID 30 A TC = 100 °C (TJ = 175 °C) 1
Pulsed Drain Current IDM 90 A 1
Continuous Source Current (Diode Conduction) IS 30 A 1
Avalanche Current IAS 28 A 1
Single Pulse Avalanche Energy EAS 7.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 60 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C, surface mounted on 1 in x 1 in FR-4 board 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Junction-to-Ambient Thermal Resistance RthJA 20 25 °C/W t ≤ 10 sec 1
Junction-to-Ambient Thermal Resistance RthJA 62 75 °C/W Steady state 1
Junction-to-Case Thermal Resistance RthJC 56 °C/W 1
Drain-Source Breakdown Voltage V(BR)DSS -60 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -150 µA VDS = -60 V, VGS = 0 V, TJ = 175 °C 2
On-State Drain Current ID(on) -10 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance rDS(on) 62 mΩ VGS = -10 V, ID = -5 A 2
Drain-Source On-State Resistance rDS(on) 80 mΩ VGS = -10 V, ID = -5 A, TJ = 125 °C 2
Drain-Source On-State Resistance rDS(on) 110 mΩ VGS = -10 V, ID = -5 A, TJ = 175 °C 2
Drain-Source On-State Resistance rDS(on) 74 mΩ VGS = -4.5 V, ID = -2 A 2
Turn-On Delay Time td(on) 5 10 ns VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω 2
Rise Time tr 14 25 ns VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω 2
Turn-Off Delay Time td(off) 15 25 ns VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω 2
Fall Time tf 7 12 ns VDD = -30 V, RL = 3.57 Ω, ID ≅ -8.4 A, VGEN = -10 V, RG = 2.5 Ω 2
Pulsed Current ISM -20 A 2
Forward Voltage VSD -0.9 -1.3 V IF = -2 A, VGS = 0 V 2
Reverse Recovery Time trr 50 80 ns IF = -8 A, di/dt = 100 A/µs 2
Reverse Recovery Charge Qrr 80 120 nC IF = -8 A, di/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: 2SJ172-VB
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: 2sj172-vb-etched.step / 2sj172-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sj172-vb.step / 2sj172-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 ffbad53489f07a7c, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF