# 2SD965ASQ-R

**PJSEMI** · Bipolar (BJT) · SOT-89

2SD965ASQ-R from PJSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet gives no pin-specific limit, only the absolute maximum emitter-base voltage VEBO of 7 V and collector current IC of 5 A. |
| 2 | Collector | passive | Collector terminal of the NPN transistor, rated for VCBO 40 V, VCEO 30 V, collector current IC 5 A and power dissipation PD 750 mW at 25°C ambient. |
| 3 | Emitter | passive | Emitter terminal of the NPN transistor, rated for an emitter-base voltage VEBO of 7 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | PJSEMI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector Base Cutoff Current | ICBO |  |  | 0.1 | μA | at VCB = 10 V | 2 |
| Emitter Base Cutoff Current | IEBO |  |  | 0.1 | μA | at VEB = 7 V | 2 |
| Collector Base Breakdown Voltage | V(BR)CBO | 40 |  |  | V | at IC = 100 μA | 2 |
| Collector Emitter Breakdown Voltage | V(BR)CEO | 30 |  |  | V | at IC = 1 mA | 2 |
| Emitter Base Breakdown Voltage | V(BR)EBO | 7 |  |  | V | at IE = 10 μA | 2 |
| Collector Emitter Saturation Voltage | VCE(sat) |  |  | 1 | V | at IC = 3 A, IB = 0.1 A | 2 |
| Collector Output Capacitance | Cob |  |  | 50 | pF | at VCB = 20 V, IE = 0, f = 1MHz | 2 |
| Collector Base Voltage | VCBO |  |  | 40 | V |  | 1 |
| Collector Emitter Voltage | VCEO |  |  | 30 | V |  | 1 |
| Emitter Base Voltage | VEBO |  |  | 7 | V |  | 1 |
| Collector Current | IC |  |  | 5 | A |  | 1 |
| Power Dissipation | PD |  |  | 750 | mW |  | 1 |
| Junction Temperature | TJ |  |  | 150 | °C |  | 1 |
| Storage Temperature Range | TSTG | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RθJA |  |  | 167 | °C/W |  | 1 |

## CAD (KiCad official)

- Symbol: `2SD965ASQ-R`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files: `2sd965asq-r-etched.step` / `2sd965asq-r-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd965asq-r.step` / `2sd965asq-r.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [PJSEMI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906214965055488) (4 pp, sha256 `9cb51f87e2ee0a0b`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sd965asq-r-datasheet.pdf)