component
2SD882N-P
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar (BJT), SOT-223. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sd882n-p-etched.glb | 6d ago |
| 2sd882n-p-etched.step | 6d ago |
| 2sd882n-p-hero.glb | 6d ago |
| 2sd882n-p-hero.overlay.json | 6d ago |
| 2sd882n-p.glb | 6d ago |
| 2sd882n-p.kicad_mod | 6d ago |
| 2sd882n-p.kicad_sym | 6d ago |
| 2sd882n-p.lbr | 6d ago |
| 2sd882n-p.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SD882N-P
Foshan Blue Rocket Elec · Bipolar (BJT) · SOT-223
2SD882N-P from Foshan Blue Rocket Elec, in a SOT-223. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; the datasheet gives VBE(sat) of 1.0 V typical and 2.0 V maximum at IC=2.0 A, IB=0.2 A. |
| 2 | Collector | passive | Collector terminal; rated VCBO 40 V, VCEO 30 V, continuous IC 3.0 A, and PC 1.0 W (10 W at TC=25°C). |
| 3 | Emitter | passive | Emitter terminal; the absolute maximum emitter-to-base voltage VEBO is 5.0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | SOT-223 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | 40 | V | 2 | |||
| Collector to Emitter Voltage | VCEO | 30 | V | 2 | |||
| Emitter to Base Voltage | VEBO | 5 | V | 2 | |||
| Collector Current - Continuous | IC | 3 | A | 2 | |||
| Collector Power Dissipation | PC | 1 | W | 2 | |||
| Collector Power Dissipation | PC | 10 | W | TC=25℃ | 2 | ||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Collector Cut-Off Current | ICBO | 1 | μA | VCB=30V IE=0 | 2 | ||
| Emitter Base Cut-Off Current | IEBO | 1 | μA | VEB=3.0V IC=0 | 2 | ||
| DC Current Gain hFE(1) | hFE(1) | 60 | 160 | 400 | VCE=2.0V IC=1.0A | 2 | |
| DC Current Gain hFE(2) | hFE(2) | 30 | 150 | VCE=2.0V IC=20mA | 2 | ||
| DC Current Gain classification P | hFE | 160 | 320 | hFE classification P (marking P) | 1 | ||
| Collector to Emitter Saturation Voltage | VCE(sat) | 0.3 | 0.5 | V | IC=2.0A IB=0.2A | 2 | |
| Base to Emitter Saturation Voltage | VBE(sat) | 1 | 2 | V | IC=2.0A IB=0.2A | 2 | |
| Transition Frequency | fT | 90 | MHz | VCE=5.0V IC=0.1A | 2 | ||
| Collector output capacitance | Cob | 45 | pF | VCB=10V IE=0 f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
2SD882N-P - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT-223 (KiCad packages3D, STEP)
- 3D model files:
2sd882n-p-etched.step/2sd882n-p-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd882n-p.step/2sd882n-p.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
1f1f03d9d32073a1, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).