component
2SD882L-P-TN3-R
Public Made by Adomby adom
UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2SD882L-P-TN3-R
UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-252
2SD882L-P-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base; the datasheet lists B as pin 1 for the TO-252 (TN3) package, with VEBO max 7 V and IB max 0.6 A. |
| 2 | C | passive | Collector; the datasheet lists C as pin 2 for the TO-252 (TN3) package, with VCBO 40 V, VCEO 30 V and IC 3 A DC (7 A pulse). |
| 3 | E | passive | Emitter; the datasheet lists E as pin 3 for the TO-252 (TN3) package. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | UTC(Unisonic Tech) |
| Package | TO-252 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-Base Voltage | VCBO | 40 | V | TA=25°C | 3 | ||
| Collector-Emitter Voltage | VCEO | 30 | V | TA=25°C | 3 | ||
| Emitter-Base Voltage | VEBO | 7 | V | TA=25°C | 3 | ||
| Collector Current DC | IC | 3 | A | DC | 3 | ||
| Collector Current Pulse | ICP | 7 | A | Pulse | 3 | ||
| Base Current | IB | 0.6 | A | TA=25°C | 3 | ||
| Collector Dissipation | PC | 1 | W | TA=25°C, TO-251/TO-252 | 3 | ||
| Junction Temperature | TJ | 150 | °C | 3 | |||
| Storage Temperature | TSTG | -55 | 150 | °C | 3 | ||
| Collector-Base Breakdown Voltage | BVCBO | 40 | V | IC=100μA, IE=0 | 3 | ||
| Collector-Emitter Breakdown Voltage | BVCEO | 30 | V | IC=1mA, IB=0 | 3 | ||
| Emitter-Base Breakdown Voltage | BVEBO | 7 | V | IE=100μA, IC=0 | 3 | ||
| Collector Cut-off Current | ICBO | 1000 | nA | VCB=30V, IE=0 | 3 | ||
| Emitter Cut-off Current | IEBO | 1000 | nA | VEB=3V, IC=0 | 3 | ||
| DC Current Gain 1 | hFE1 | 30 | VCE=2V, IC=20mA | 3 | |||
| DC Current Gain 2 | hFE2 | 100 | 150 | 400 | VCE=2V, IC=1A | 3 | |
| DC Current Gain 2 rank P | hFE2 | 160 | 320 | Rank P, VCE=2V, IC=1A | 3 | ||
| Collector-Emitter Saturation Voltage | VCE(SAT) | 0.3 | 0.5 | V | IC=2A, IB=0.2A | 3 | |
| Base-Emitter Saturation Voltage | VBE(SAT) | 1 | 2 | V | IC=2A, IB=0.2A | 3 | |
| Current Gain Bandwidth Product | fT | 80 | MHz | VCE=5V, IC=0.1A | 3 | ||
| Output Capacitance | Cob | 45 | pF | VCB=10V, IE=0, f=1MHz | 3 |
CAD (KiCad official)
- Symbol:
2SD882L-P-TN3-R - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sd882l-p-tn3-r-etched.step/2sd882l-p-tn3-r-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd882l-p-tn3-r.step/2sd882l-p-tn3-r.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256
5a5952a6e6647941, retrieved 2026-10-31, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).