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2SD882-MS

Public Made by Adom

by adom

MSKSEMI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sd882-msfactory-2.0.0extractor-text
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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2SD882-MS

MSKSEMI · Bipolar (BJT) · SOT-89

2SD882-MS from MSKSEMI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor, with emitter-base breakdown voltage V(BR)EBO of 6 V minimum and VBE(sat) of 1.5 V max at IC = 2 A, IB = 0.2 A.
2 COLLECTOR passive Collector terminal, rated for 3 A continuous collector current, VCBO 40 V, VCEO 30 V, and collector power dissipation PC 0.5 W.
3 EMITTER passive Emitter terminal, rated for VEBO 6 V and VCE(sat) 0.5 V max at IC = 2 A, IB = 0.2 A.

Key specifications

Parameter Value
Manufacturer MSKSEMI
Package SOT-89
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 40 V 2
Collector-Emitter Voltage VCEO 30 V 2
Emitter-Base Voltage VEBO 6 V 2
Collector Current - Continuous IC 3 A 2
Collector Power Dissipation PC 0.5 W 2
Junction Temperature TJ 150 ℃ 2
Storage Temperature Tstg -55 150 ℃ 2
Collector-base breakdown voltage V(BR)CBO 40 V IC = 100μA, IE=0 2
Collector-emitter breakdown voltage V(BR)CEO 30 V IC = 10mA, IB=0 2
Emitter-base breakdown voltage V(BR)EBO 6 V IE= 100μA, IC=0 2
Collector cut-off current (base open, ICBO) ICBO 1 µA VCB= 40V, IE=0 2
Collector cut-off current (emitter open, ICEO) ICEO 10 µA VCE= 30V, IB=0 2
Emitter cut-off current IEBO 1 µA VEB= 6V, IC=0 2
DC current gain hFE(1) hFE(1) 60 400 VCE=2V, IC= 1A 2
DC current gain hFE(2) hFE(2) 32 VCE=2V, IC= 100mA 2
Collector-emitter saturation voltage VCE(sat) 0.5 V IC= 2A, IB= 0.2 A 2
Base-emitter saturation voltage VBE(sat) 1.5 V IC= 2A, IB= 0.2 A 2
Transition frequency fT 50 MHz VCE= 5V, Ic=0.1A, f=10MHz 2

CAD (KiCad official)

  • Symbol: 2SD882-MS
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd882-ms-etched.step / 2sd882-ms-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd882-ms.step / 2sd882-ms.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: MSKSEMI datasheet (4 pp, sha256 20717776fc08307f, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF