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Ray Publish 0.1.0 8dfd9b4 7d ago

2SD880

Changjing · Bipolar (BJT) · TO-220-3L

2SD880 from Changjing, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE passive Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 7 V and gives emitter-base breakdown V(BR)EBO of 7 V minimum at IE=100µA.
2 COLLECTOR passive Collector terminal of the NPN transistor, rated for collector-base voltage VCBO of 60 V, collector-emitter voltage VCEO of 60 V, continuous collector current IC of 3 A, and collector power dissipation PC of 1.5 W.
3 EMITTER passive Emitter terminal of the NPN transistor, referenced in the datasheet's emitter-base ratings (VEBO 7 V) and collector-emitter breakdown specification (VCEO 60 V).

Key specifications

Parameter Value
Manufacturer Changjing
Package TO-220-3L
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base voltage VCBO 60 V Ta=25℃ 1
Collector-emitter voltage VCEO 60 V Ta=25℃ 1
Emitter-base voltage VEBO 7 V Ta=25℃ 1
Collector current, continuous IC 3 A Ta=25℃ 1
Collector power dissipation PC 1.5 W Ta=25℃ 1
Junction temperature TJ 150 ℃ Ta=25℃ 1
Storage temperature Tstg -55 150 ℃ Ta=25℃ 1
Collector-base breakdown voltage V(BR)CBO 60 V IC=100µA, IE=0 1
Collector-emitter breakdown voltage V(BR)CEO 60 V IC=50mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO 7 V IE= 100µA, IC=0 1
Collector cut-off current ICBO 100 µA VCB=60V, IE=0 1
Emitter cut-off current IEBO 100 µA VEB=7V, IC=0 1
DC current gain hFE 60 300 VCE=5V, IC=500mA 1
Collector-emitter saturation voltage VCE (sat) 1 V IC=3A, IB=300mA 1
Base-emitter voltage VBE 1 V IC=0.5A, VCE= 5V 1
Transition frequency fT 3 MHz VCE=5 V, IC=500mA 1
Collector output capacitance Cob 70 pF VCB=10V, IE=0, f=1MHz 1
Turn on time ton 0.8 µs 1
Storage time ts 1.5 µs 1
Fall time tf 0.8 µs IB1=-IB2=0.2A, IC=2A, VCC=30V, PW=20µs 1

CAD (KiCad official)

  • Symbol: 2SD880
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: 2sd880-etched.step / 2sd880-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd880.step / 2sd880.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Changjing datasheet (1 pp, sha256 72fcabeb752aa284, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF