component
2SD880
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
main
2SD880
Changjing · Bipolar (BJT) · TO-220-3L
2SD880 from Changjing, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 7 V and gives emitter-base breakdown V(BR)EBO of 7 V minimum at IE=100µA. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for collector-base voltage VCBO of 60 V, collector-emitter voltage VCEO of 60 V, continuous collector current IC of 3 A, and collector power dissipation PC of 1.5 W. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, referenced in the datasheet's emitter-base ratings (VEBO 7 V) and collector-emitter breakdown specification (VCEO 60 V). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | 60 | V | Ta=25℃ | 1 | ||
| Collector-emitter voltage | VCEO | 60 | V | Ta=25℃ | 1 | ||
| Emitter-base voltage | VEBO | 7 | V | Ta=25℃ | 1 | ||
| Collector current, continuous | IC | 3 | A | Ta=25℃ | 1 | ||
| Collector power dissipation | PC | 1.5 | W | Ta=25℃ | 1 | ||
| Junction temperature | TJ | 150 | ℃ | Ta=25℃ | 1 | ||
| Storage temperature | Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 | |
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100µA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V | IC=50mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE= 100µA, IC=0 | 1 | ||
| Collector cut-off current | ICBO | 100 | µA | VCB=60V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 100 | µA | VEB=7V, IC=0 | 1 | ||
| DC current gain | hFE | 60 | 300 | VCE=5V, IC=500mA | 1 | ||
| Collector-emitter saturation voltage | VCE (sat) | 1 | V | IC=3A, IB=300mA | 1 | ||
| Base-emitter voltage | VBE | 1 | V | IC=0.5A, VCE= 5V | 1 | ||
| Transition frequency | fT | 3 | MHz | VCE=5 V, IC=500mA | 1 | ||
| Collector output capacitance | Cob | 70 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Turn on time | ton | 0.8 | µs | 1 | |||
| Storage time | ts | 1.5 | µs | 1 | |||
| Fall time | tf | 0.8 | µs | IB1=-IB2=0.2A, IC=2A, VCC=30V, PW=20µs | 1 |
CAD (KiCad official)
- Symbol:
2SD880 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
2sd880-etched.step/2sd880-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd880.step/2sd880.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (1 pp, sha256
72fcabeb752aa284, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD880
**Changjing** · Bipolar (BJT) · TO-220-3L
2SD880 from Changjing, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | passive | Base terminal of the NPN transistor; the datasheet rates emitter-base voltage VEBO at 7 V and gives emitter-base breakdown V(BR)EBO of 7 V minimum at IE=100µA. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for collector-base voltage VCBO of 60 V, collector-emitter voltage VCEO of 60 V, continuous collector current IC of 3 A, and collector power dissipation PC of 1.5 W. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, referenced in the datasheet's emitter-base ratings (VEBO 7 V) and collector-emitter breakdown specification (VCEO 60 V). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-220-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base voltage | VCBO | | | 60 | V | Ta=25℃ | 1 |
| Collector-emitter voltage | VCEO | | | 60 | V | Ta=25℃ | 1 |
| Emitter-base voltage | VEBO | | | 7 | V | Ta=25℃ | 1 |
| Collector current, continuous | IC | | | 3 | A | Ta=25℃ | 1 |
| Collector power dissipation | PC | | | 1.5 | W | Ta=25℃ | 1 |
| Junction temperature | TJ | | | 150 | ℃ | Ta=25℃ | 1 |
| Storage temperature | Tstg | -55 | | 150 | ℃ | Ta=25℃ | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 60 | | | V | IC=100µA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | | | V | IC=50mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 7 | | | V | IE= 100µA, IC=0 | 1 |
| Collector cut-off current | ICBO | | | 100 | µA | VCB=60V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 100 | µA | VEB=7V, IC=0 | 1 |
| DC current gain | hFE | 60 | | 300 | | VCE=5V, IC=500mA | 1 |
| Collector-emitter saturation voltage | VCE (sat) | | | 1 | V | IC=3A, IB=300mA | 1 |
| Base-emitter voltage | VBE | | | 1 | V | IC=0.5A, VCE= 5V | 1 |
| Transition frequency | fT | 3 | | | MHz | VCE=5 V, IC=500mA | 1 |
| Collector output capacitance | Cob | | | 70 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Turn on time | ton | | 0.8 | | µs | | 1 |
| Storage time | ts | | 1.5 | | µs | | 1 |
| Fall time | tf | | 0.8 | | µs | IB1=-IB2=0.2A, IC=2A, VCC=30V, PW=20µs | 1 |
## CAD (KiCad official)
- Symbol: `2SD880`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files: `2sd880-etched.step` / `2sd880-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd880.step` / `2sd880.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887146119221248) (1 pp, sha256 `72fcabeb752aa284`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd880-datasheet.pdf)