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Ray Publish 0.1.0 18f9392 2d ago

2SD669AG-C-TN3-R

UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-252-2(DPAK)

2SD669AG-C-TN3-R from UTC(Unisonic Tech), in a TO-252-2(DPAK). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base; absolute maximum base current is 0.5 A and emitter-base voltage is 5 V.
2 C passive Collector; absolute maximum 1.5 A continuous (3 A peak), VCBO 180 V, and VCEO 160 V for the 2SD669A (120 V for 2SD669).
3 E passive Emitter; emitter-base breakdown voltage VEBO is 5 V maximum.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-252-2(DPAK)
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 180 V TA=25°C 3
Collector-Emitter Voltage (2SD669A) VCEO 160 V TA=25°C 3
Emitter-Base Voltage VEBO 5 V TA=25°C 3
Collector Current IC 1.5 A TA=25°C 3
Collector Peak Current IC(PEAK) 3 A TA=25°C 3
Base Current IB 0.5 A TA=25°C 3
Power Dissipation (TO-251/TO-252) PD 2 W TA=25°C 3
Junction Temperature TJ 150 °C 3
Storage Temperature TSTG -40 150 °C 3
Thermal Resistance Junction to Case (TO-251/TO-252) θJC 4.5 °C/W 3
Collector to Base Breakdown Voltage BVCBO 180 V IC=1mA, IE=0 4
Collector to Emitter Breakdown Voltage (2SD669A) BVCEO 160 V IC=10mA, RBE= 4
Collector to Emitter Breakdown Voltage (VBE=0V) (2SD669A) BVCES 160 V IC=1mA, VBE=0V 4
Emitter to Base Breakdown Voltage BVEBO 5 V IE=1mA, IC=0 4
Collector Cut-off Current ICBO 10 μA VCB=160V, IE=0 4
Emitter Cutoff Current IEBO 10 μA VEB=4V, IC=0 4
DC Current Gain (Rank C) hFE1 100 200 VCE=5V, IC=150mA (Note); rank C range 100-200 4
DC Current Gain hFE2 30 VCE=5V, IC=500mA (Note) 4
Collector-Emitter Saturation Voltage VCE(SAT) 1 V IC=600mA, IB=50mA (Note) 4
Base-Emitter Saturation Voltage VBE(SAT) 1.2 V IC=600mA, IB=50mA (Note) 4
Base-Emitter Voltage VBE 1.5 V VCE=5V, IC=150mA (Note) 4
Current Gain Bandwidth Product fT 140 MHz VCE=5V, IC=150mA (Note) 4
Output Capacitance Cob 14 pF VCB=10V, IE=0, f=1MHz 4
Rise Time tR 0.5 μs VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25μs, Duty Cycle≤1% 4
Storage Time tS 1.5 μs VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25μs, Duty Cycle≤1% 4
Fall Time tF 0.7 μs VCC=50V, IC=0.5A, IB1=IB2=10mA, tP=25μs, Duty Cycle≤1% 4

CAD (KiCad official)

  • Symbol: 2SD669AG-C-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252-2(DPAK) (KiCad packages3D, STEP)
  • 3D model files: 2sd669ag-c-tn3-r-etched.step / 2sd669ag-c-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd669ag-c-tn3-r.step / 2sd669ag-c-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (6 pp, sha256 9b6a53e317fe398c, retrieved 2026-10-30, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF