component
2SD667A-C
Public Made by Adomby adom
Foshan Blue Rocket Elec Bipolar Transistors - BJT, TO-92-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 2d ago |
| viewers | 2d ago |
| 2sd667a-c-etched.glb | 2d ago |
| 2sd667a-c-etched.step | 2d ago |
| 2sd667a-c-hero.glb | 2d ago |
| 2sd667a-c-hero.overlay.json | 2d ago |
| 2sd667a-c.glb | 2d ago |
| 2sd667a-c.kicad_mod | 2d ago |
| 2sd667a-c.kicad_sym | 2d ago |
| 2sd667a-c.lbr | 2d ago |
| 2sd667a-c.step | 2d ago |
| package.json | 2d ago |
| page.json | 2d ago |
| README.md | 2d ago |
2SD667A-C
Foshan Blue Rocket Elec · Bipolar Transistors - BJT · TO-92-3
2SD667A-C from Foshan Blue Rocket Elec, in a TO-92-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor; VEBO max 5.0 V. |
| 2 | Collector | passive | Collector; VCBO 120 V, VCEO 100 V (2SD667A), IC 1.0 A DC and 2.0 A pulse. |
| 3 | Emitter | passive | Emitter of the NPN transistor; total power dissipation PC 900 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Foshan Blue Rocket Elec |
| Package | TO-92-3 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector to Base Voltage | VCBO | 120 | V | 2 | |||
| Collector to Emitter Voltage (2SD667A) | VCEO | 100 | V | 2SD667A | 2 | ||
| Emitter to Base Voltage | VEBO | 5 | V | 2 | |||
| Collector Current (DC) | IC | 1 | A | 2 | |||
| Collector Current (Pulse) | ICP | 2 | A | 2 | |||
| Collector Power Dissipation | PC | 900 | mW | Ta=25℃ | 2 | ||
| Junction Temperature | Tj | 150 | ℃ | 2 | |||
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | 2 | ||
| Collector to Base Breakdown Voltage | VCBO | 120 | V | IC=10μA IE=0 | 2 | ||
| Collector to Emitter Breakdown Voltage (2SD667A) | VCEO | 100 | V | IC=1.0mA IB=0 | 2 | ||
| Emitter to Base Breakdown Voltage | VEBO | 5 | V | IE=10μA IC=0 | 2 | ||
| Collector Cut-Off Current | ICBO | 10 | μA | VCB=100V IE=0 | 2 | ||
| DC Current Gain (1) | hFE(1) | 60 | 320 | VCE=5.0V IC=150mA | 2 | ||
| DC Current Gain (2) | hFE(2) | 30 | VCE=5.0V IC=500mA | 2 | |||
| Collector to Emitter Saturation Voltage | VCE(sat) | 1 | V | IC=500mA IB=50mA | 2 | ||
| Base to Emitter Saturation Voltage | VBE | 1.5 | V | VCE=5.0V IC=150mA | 2 | ||
| Transition Frequency | fT | 140 | MHz | VCE=5.0V IC=150mA | 2 | ||
| Collector Output Capacitance | Cob | 12 | pF | VCB=10V IE=0 f=1.0MHz | 2 |
CAD (KiCad official)
- Symbol:
2SD667A-C - Footprint:
Package_TO_SOT_THT:TO-92_Inline - 3D model: TO-92-3 (KiCad packages3D, STEP)
- 3D model files:
2sd667a-c-etched.step/2sd667a-c-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd667a-c.step/2sd667a-c.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Foshan Blue Rocket Elec datasheet (6 pp, sha256
a283bec302920b25, retrieved 2026-10-22, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).