component
2SD667
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-92L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 7d ago |
| viewers | 7d ago |
| 2sd667-etched.glb | 7d ago |
| 2sd667-etched.step | 7d ago |
| 2sd667-hero.glb | 7d ago |
| 2sd667-hero.overlay.json | 7d ago |
| 2sd667.glb | 7d ago |
| 2sd667.kicad_mod | 7d ago |
| 2sd667.kicad_sym | 7d ago |
| 2sd667.lbr | 7d ago |
| 2sd667.step | 7d ago |
| package.json | 7d ago |
| page.json | 7d ago |
| README.md | 7d ago |
2SD667
Changjing · Bipolar (BJT) · TO-92L
2SD667 from Changjing, in a TO-92L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | EMITTER | passive | Emitter terminal of the NPN transistor (2SD667); the datasheet gives no pin-specific current or voltage limit for this pin. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor (2SD667); the datasheet gives no pin-specific limit, and the collector ratings (VCBO 120 V, VCEO 80 V for 2SD667, IC 1 A continuous) apply to the device as a whole. |
| 3 | BASE | passive | Base terminal of the NPN transistor (2SD667); the datasheet gives no pin-specific limit, and the emitter-base voltage rating of 5 V applies to the device as a whole. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-92L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 120 | V | IC=10μA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage (2SD667) | V(BR)CEO | 80 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=10μA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 10 | μA | VCB=100V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 10 | μA | VEB=4V,IC=0 | 1 | ||
| DC current gain hFE(1) (2SD667, rank B to D) | hFE(1) | 60 | 320 | VCE=5V,IC=150mA | 1 | ||
| DC current gain hFE(2) | hFE(2) | 30 | VCE=5V,IC=500mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=500mA,IB=50mA | 1 | ||
| Base-emitter voltage | VBE | 1.5 | V | VCE=5V,IC=150mA | 1 | ||
| Transition frequency | fT | 140 | MHz | VCE=5V,IC=150mA | 1 | ||
| Collector output capacitance | Cob | 12 | pF | VCB=10V,IE=0,f=1MHz | 1 | ||
| Collector-base voltage | VCBO | 120 | V | 1 | |||
| Collector-emitter voltage (2SD667) | VCEO | 80 | V | 1 | |||
| Emitter-base voltage | VEBO | 5 | V | 1 | |||
| Collector current, continuous | IC | 1 | A | 1 | |||
| Collector power dissipation | PC | 900 | mW | 1 | |||
| Junction temperature | TJ | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction to ambient | RθJA | 139 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SD667 - Footprint:
Package_TO_SOT_THT:TO-92 - 3D model: TO-92L (KiCad packages3D, STEP)
- 3D model files:
2sd667-etched.step/2sd667-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd667.step/2sd667.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
b2776d92edc7492d, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).