component
2SD313
Public Made by Adomby adom
Changjing Bipolar Transistors - BJT, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2SD313
Changjing · Bipolar Transistors - BJT · TO-220-3L
2SD313 from Changjing, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; VEBO max 5 V and IB=0.2A in the VCE(sat) test condition. |
| 2 | COLLECTOR | passive | Collector terminal; VCBO 60 V, VCEO 60 V, continuous IC max 3 A. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; VEBO max 5 V relative to base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-220-3L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100μA, IE=0 | 2 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V | IC=1mA, IB=0 | 2 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 5 | V | IE=100μA, IC=0 | 2 | ||
| Collector cut-off current | ICBO | 100 | μA | VCB=60V, IE=0 | 2 | ||
| Collector cut-off current | ICEO | 1 | mA | VCE=60V, IE=0 | 2 | ||
| Emitter cut-off current | IEBO | 100 | μA | VEB=4V, IC=0 | 2 | ||
| DC current gain | hFE(1) | 40 | 320 | VCE=2V, IC=1A | 2 | ||
| DC current gain | hFE(2) | 40 | VCE=2V, IC=0.1A | 2 | |||
| Collector-emitter saturation voltage | VCE(sat) | 1 | V | IC=2A, IB=200mA | 2 | ||
| Base-emitter voltage | VBE | 1.5 | V | VCE=2V, IC=1A | 2 | ||
| Transition frequency | fT | 8 | MHz | VCE=5V, IC=500mA | 2 | ||
| Collector output capacitance | Cob | 65 | pF | VCB=10V, IE=0,f=1MHz | 2 | ||
| Collector-Base Voltage | VCBO | 60 | V | Ta=25℃ | 1 | ||
| Collector-Emitter Voltage | VCEO | 60 | V | Ta=25℃ | 1 | ||
| Emitter-Base Voltage | VEBO | 5 | V | Ta=25℃ | 1 | ||
| Collector Current -Continuous | IC | 3 | A | Ta=25℃ | 1 | ||
| Collector Power Dissipation | PC | 1.75 | W | Ta=25℃ | 1 | ||
| Operation Junction and Storage Temperature Range | TJ,Tstg | -55 | 150 | ℃ | Ta=25℃ | 1 |
CAD (KiCad official)
- Symbol:
2SD313 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220-3L (KiCad packages3D, STEP)
- 3D model files:
2sd313-etched.step/2sd313-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd313.step/2sd313.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (3 pp, sha256
f58aabf3d80cb25a, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).