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2SD2707T2LV
Public Made by Adomby adom
ROHM Semicon Bipolar Transistors - BJT, SOT-723. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD2707T2LV
ROHM Semicon · Bipolar Transistors - BJT · SOT-723
2SD2707T2LV from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; VEBO is rated at 12V max and IC/IB=50mA/5mA is used for the VCE(sat) test. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; connected to the emitter arrow in the inner circuit. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; VCEO is 50V, VCBO is 60V and IC is 150mA max (200mA pulsed). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-723 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | V | IC = 10μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 50 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 12 | V | IE = 10μA | 2 | ||
| Collector cut-off current | ICBO | 300 | nA | VCB = 50V | 2 | ||
| Emitter cut-off current | IEBO | 300 | nA | VEB = 12V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 300 | mV | IC = 50mA, IB = 5mA | 2 | ||
| DC current gain | hFE | 820 | 2700 | VCE = 5V, IC = 1mA | 2 | ||
| Transition frequency | fT | 250 | MHz | VCE = 5V, IE = -10mA, f = 100MHz | 2 | ||
| Output capacitance | Cob | 3.5 | pF | VCB = 5V, IE = 0A, f = 1MHz | 2 | ||
| Collector-base voltage | VCBO | 60 | V | Ta = 25°C | 2 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta = 25°C | 2 | ||
| Emitter-base voltage | VEBO | 12 | V | Ta = 25°C | 2 | ||
| Collector current | IC | 150 | mA | Ta = 25°C | 2 | ||
| Collector current (pulse) | ICP | 200 | mA | Pw=10ms, Single Pulse | 2 | ||
| Power dissipation | PD | 150 | mW | Each terminal mounted on a reference land | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SD2707T2LV - Footprint:
Package_TO_SOT_SMD:SOT-723 - 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files:
2sd2707t2lv-etched.step/2sd2707t2lv-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd2707t2lv.step/2sd2707t2lv.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
e8d7618249765f38, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD2707T2LV
**ROHM Semicon** · Bipolar Transistors - BJT · SOT-723
2SD2707T2LV from ROHM Semicon, in a SOT-723. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base terminal of the NPN transistor; VEBO is rated at 12V max and IC/IB=50mA/5mA is used for the VCE(sat) test. |
| 2 | Emitter | passive | Emitter terminal of the NPN transistor; connected to the emitter arrow in the inner circuit. |
| 3 | Collector | passive | Collector terminal of the NPN transistor; VCEO is 50V, VCBO is 60V and IC is 150mA max (200mA pulsed). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-723 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | | | V | IC = 10μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | 50 | | | V | IC = 1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | 12 | | | V | IE = 10μA | 2 |
| Collector cut-off current | ICBO | | | 300 | nA | VCB = 50V | 2 |
| Emitter cut-off current | IEBO | | | 300 | nA | VEB = 12V | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 300 | mV | IC = 50mA, IB = 5mA | 2 |
| DC current gain | hFE | 820 | | 2700 | | VCE = 5V, IC = 1mA | 2 |
| Transition frequency | fT | | 250 | | MHz | VCE = 5V, IE = -10mA, f = 100MHz | 2 |
| Output capacitance | Cob | | 3.5 | | pF | VCB = 5V, IE = 0A, f = 1MHz | 2 |
| Collector-base voltage | VCBO | | | 60 | V | Ta = 25°C | 2 |
| Collector-emitter voltage | VCEO | | | 50 | V | Ta = 25°C | 2 |
| Emitter-base voltage | VEBO | | | 12 | V | Ta = 25°C | 2 |
| Collector current | IC | | | 150 | mA | Ta = 25°C | 2 |
| Collector current (pulse) | ICP | | | 200 | mA | Pw=10ms, Single Pulse | 2 |
| Power dissipation | PD | | | 150 | mW | Each terminal mounted on a reference land | 2 |
| Junction temperature | Tj | | | 150 | ℃ | | 2 |
| Range of storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `2SD2707T2LV`
- Footprint: `Package_TO_SOT_SMD:SOT-723`
- 3D model: SOT-723, generated from the KiCad footprint (body from the F.Fab outline, terminals on the pads, 0.5 mm nominal SOT-723 height). Neither the vendor nor KiCad ships a 3D model for this package, so the dimensions are nominal, not the manufacturer's CAD (STEP)
- 3D model files: `2sd2707t2lv-etched.step` / `2sd2707t2lv-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd2707t2lv.step` / `2sd2707t2lv.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](docs/2sd2707t2lv-datasheet.pdf) (9 pp, sha256 `e8d7618249765f38`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd2707t2lv-datasheet.pdf)