component
2SD2351T106W
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-323. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD2351T106W
ROHM Semicon · Bipolar (BJT) · SOT-323
2SD2351T106W from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; BVEBO is 12V min at IE = 10μA and VEBO max is 12V. |
| 2 | B | passive | Base terminal of the NPN transistor; VCE(sat) max is 300mV at IC/IB = 50mA/5mA. |
| 3 | C | passive | Collector terminal of the NPN transistor; VCEO is 50V, VCBO is 60V and IC is 150mA (ICP 200mA). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | V | IC = 10μA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 50 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 12 | V | IE = 10μA | 2 | ||
| Collector cut-off current | ICBO | 300 | nA | VCB = 50V | 2 | ||
| Emitter cut-off current | IEBO | 300 | nA | VEB = 12V | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 300 | mV | IC = 50mA, IB = 5mA | 2 | ||
| DC current gain | hFE | 820 | 2700 | - | VCE = 5V, IC = 1mA | 2 | |
| Collector current | IC | 150 | mA | 2 | |||
| Collector current (pulse) | ICP | 200 | mA | Pw=10ms, Single Pulse (*1) | 2 | ||
| Collector-base voltage | VCBO | 60 | V | 2 | |||
| Collector-emitter voltage | VCEO | 50 | V | 2 | |||
| Emitter-base voltage | VEBO | 12 | V | 2 | |||
| Power dissipation | PD | 200 | mW | Each terminal mounted on a reference land (*2) | 2 | ||
| Junction temperature | Tj | 150 | ℃ | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | ℃ | 2 |
CAD (KiCad official)
- Symbol:
2SD2351T106W - Footprint:
Package_TO_SOT_SMD:SOT-323_SC-70 - 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files:
2sd2351t106w-etched.step/2sd2351t106w-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd2351t106w.step/2sd2351t106w.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (9 pp, sha256
c400139b584fa7df, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD2351T106W
**ROHM Semicon** · Bipolar (BJT) · SOT-323
2SD2351T106W from ROHM Semicon, in a SOT-323. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | E | passive | Emitter terminal of the NPN transistor; BVEBO is 12V min at IE = 10μA and VEBO max is 12V. |
| 2 | B | passive | Base terminal of the NPN transistor; VCE(sat) max is 300mV at IC/IB = 50mA/5mA. |
| 3 | C | passive | Collector terminal of the NPN transistor; VCEO is 50V, VCBO is 60V and IC is 150mA (ICP 200mA). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-323 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | | | V | IC = 10μA | 2 |
| Collector-emitter breakdown voltage | BVCEO | 50 | | | V | IC = 1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | 12 | | | V | IE = 10μA | 2 |
| Collector cut-off current | ICBO | | | 300 | nA | VCB = 50V | 2 |
| Emitter cut-off current | IEBO | | | 300 | nA | VEB = 12V | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | | 300 | mV | IC = 50mA, IB = 5mA | 2 |
| DC current gain | hFE | 820 | | 2700 | - | VCE = 5V, IC = 1mA | 2 |
| Collector current | IC | | | 150 | mA | | 2 |
| Collector current (pulse) | ICP | | | 200 | mA | Pw=10ms, Single Pulse (*1) | 2 |
| Collector-base voltage | VCBO | | | 60 | V | | 2 |
| Collector-emitter voltage | VCEO | | | 50 | V | | 2 |
| Emitter-base voltage | VEBO | | | 12 | V | | 2 |
| Power dissipation | PD | | | 200 | mW | Each terminal mounted on a reference land (*2) | 2 |
| Junction temperature | Tj | | | 150 | ℃ | | 2 |
| Range of storage temperature | Tstg | -55 | | 150 | ℃ | | 2 |
## CAD (KiCad official)
- Symbol: `2SD2351T106W`
- Footprint: `Package_TO_SOT_SMD:SOT-323_SC-70`
- 3D model: SOT-323 (KiCad packages3D, STEP)
- 3D model files: `2sd2351t106w-etched.step` / `2sd2351t106w-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd2351t106w.step` / `2sd2351t106w.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588904208073936896) (9 pp, sha256 `c400139b584fa7df`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd2351t106w-datasheet.pdf)