component
2SD2150
Public Made by Adomby adom
Changjing Bipolar (BJT), SOT-89-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD2150
Changjing · Bipolar (BJT) · SOT-89-3L
2SD2150 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the emitter-base voltage VEBO is rated at 6 V maximum. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; rated at VCBO 40 V, VCEO 20 V, and 3 A continuous collector current. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base voltage is rated at VEBO 6 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | 20 | V | 1 | |||
| Collector-base voltage | VCBO | 40 | V | 1 | |||
| Emitter-base voltage | VEBO | 6 | V | 1 | |||
| Collector current, continuous | IC | 3 | A | 1 | |||
| Collector power dissipation | PC | 500 | mW | 1 | |||
| Operation junction and storage temperature range | TJ,Tstg | -55 | 150 | ℃ | 1 | ||
| Collector-base breakdown voltage | V(BR)CBO | 40 | V | IC =50uA, IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 20 | V | IC =1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V | IE=50μA, IC=0 | 1 | ||
| DC current gain | hFE | 180 | 560 | VCE=2V, IC=100mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | V | IC=2A, IB=100mA | 1 | ||
| Collector cut-off current | ICBO | 0.1 | μA | VCB=30V, IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 0.1 | μA | VEB=5V, IC=0 | 1 | ||
| Collector output capacitance | Cob | 25 | pF | VCB=10V, IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 290 | MHz | VCE=2V,IC=500mA f=100MHz | 1 |
CAD (KiCad official)
- Symbol:
2SD2150 - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files:
2sd2150-etched.step/2sd2150-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd2150.step/2sd2150.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
5ed42453bf4ae3ce, retrieved 2026-10-19, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD2150
**Changjing** · Bipolar (BJT) · SOT-89-3L
2SD2150 from Changjing, in a SOT-89-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; the emitter-base voltage VEBO is rated at 6 V maximum. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor; rated at VCBO 40 V, VCEO 20 V, and 3 A continuous collector current. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor; emitter-base voltage is rated at VEBO 6 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | SOT-89-3L |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-emitter voltage | VCEO | | | 20 | V | | 1 |
| Collector-base voltage | VCBO | | | 40 | V | | 1 |
| Emitter-base voltage | VEBO | | | 6 | V | | 1 |
| Collector current, continuous | IC | | | 3 | A | | 1 |
| Collector power dissipation | PC | | | 500 | mW | | 1 |
| Operation junction and storage temperature range | TJ,Tstg | -55 | | 150 | ℃ | | 1 |
| Collector-base breakdown voltage | V(BR)CBO | 40 | | | V | IC =50uA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 20 | | | V | IC =1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | | | V | IE=50μA, IC=0 | 1 |
| DC current gain | hFE | 180 | | 560 | | VCE=2V, IC=100mA | 1 |
| Collector-emitter saturation voltage | VCE(sat) | | | 0.5 | V | IC=2A, IB=100mA | 1 |
| Collector cut-off current | ICBO | | | 0.1 | μA | VCB=30V, IE=0 | 1 |
| Emitter cut-off current | IEBO | | | 0.1 | μA | VEB=5V, IC=0 | 1 |
| Collector output capacitance | Cob | | | 25 | pF | VCB=10V, IE=0, f=1MHz | 1 |
| Transition frequency | fT | | 290 | | MHz | VCE=2V,IC=500mA f=100MHz | 1 |
## CAD (KiCad official)
- Symbol: `2SD2150`
- Footprint: `Package_TO_SOT_SMD:SOT-89-3`
- 3D model: SOT-89-3L (KiCad packages3D, STEP)
- 3D model files: `2sd2150-etched.step` / `2sd2150-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd2150.step` / `2sd2150.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [Changjing datasheet](docs/2sd2150-datasheet.pdf) (4 pp, sha256 `5ed42453bf4ae3ce`, retrieved 2026-10-19, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd2150-datasheet.pdf)