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2SD2098T100R-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2SD2098T100R-HXY

HXY MOSFET · Bipolar (BJT) · SOT-89

2SD2098T100R-HXY from HXY MOSFET, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal; emitter-base voltage is rated at 6 V maximum (VEBO) and the emitter-base breakdown V(BR)EBO is 6 V minimum.
2 C passive Collector terminal; rated for 50 V collector-base (VCBO), 20 V collector-emitter (VCEO) and 5 A continuous collector current.
3 E passive Emitter terminal of the NPN transistor; total collector power dissipation is 500 mW and junction temperature range is -55 to 150 °C.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-89
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: 2SD2098T100R-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-89-3
  • 3D model: SOT-89 (KiCad packages3D, STEP)
  • 3D model files: 2sd2098t100r-hxy-etched.step / 2sd2098t100r-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd2098t100r-hxy.step / 2sd2098t100r-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (3 pp, sha256 9749b752819c9142, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF