component
2SD1899
Public Made by Adomby adom
Changjing Bipolar (BJT), TO-252-2L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 6d ago |
| viewers | 6d ago |
| 2sd1899-etched.glb | 6d ago |
| 2sd1899-etched.step | 6d ago |
| 2sd1899-hero.glb | 6d ago |
| 2sd1899-hero.overlay.json | 6d ago |
| 2sd1899.glb | 6d ago |
| 2sd1899.kicad_mod | 6d ago |
| 2sd1899.kicad_sym | 6d ago |
| 2sd1899.lbr | 6d ago |
| 2sd1899.step | 6d ago |
| package.json | 6d ago |
| page.json | 6d ago |
| README.md | 6d ago |
2SD1899
Changjing · Bipolar (BJT) · TO-252-2L
2SD1899 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor; emitter-base breakdown voltage V(BR)EBO is 7 V minimum and VEBO is rated at 7 V. |
| 2 | COLLECTOR | passive | Collector terminal of the NPN transistor, rated for VCBO 60 V, VCEO 60 V, IC 3 A and PC 1 W. |
| 3 | EMITTER | passive | Emitter terminal of the NPN transistor, with VEBO rated at 7 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 60 | V | IC=100µA,IE=0 | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | 60 | V | IC=1mA,IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | 7 | V | IE=100µA,IC=0 | 1 | ||
| Collector cut-off current | ICBO | 10 | μA | VCB=60V,IE=0 | 1 | ||
| Emitter cut-off current | IEBO | 10 | μA | VEB=7V,IC=0 | 1 | ||
| DC current gain | hFE(1) | 60 | VCE=2V, IC=0.2A | 1 | |||
| DC current gain | hFE(2) | 100 | 400 | VCE=2V, IC=0.6A | 1 | ||
| DC current gain | hFE(3) | 50 | VCE=2V, IC=2A | 1 | |||
| Collector-emitter saturation voltage | VCE(sat) | 0.25 | V | IC=1.5A,IB=0.15A | 1 | ||
| Base-emitter saturation voltage | VBE(sat) | 1.2 | V | IC=1.5A,IB=0.15A | 1 | ||
| Collector output capacitance | Cob | 30 | pF | VCB=10V,IE=0, f=1MHz | 1 | ||
| Transition frequency | fT | 120 | MHz | VCE=5V,IC=1.5A | 1 | ||
| Collector-base voltage | VCBO | 60 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector-emitter voltage | VCEO | 60 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Emitter-base voltage | VEBO | 7 | V | Ta=25℃ unless otherwise noted | 1 | ||
| Collector current | IC | 3 | A | Ta=25℃ unless otherwise noted | 1 | ||
| Collector power dissipation | PC | 1 | W | Ta=25℃ unless otherwise noted | 1 | ||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 | ||
| Thermal resistance from junction to ambient | RθJA | 125 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
2SD1899 - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files:
2sd1899-etched.step/2sd1899-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1899.step/2sd1899.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Changjing datasheet (4 pp, sha256
9fb91e52d3df10f4, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).