component
2SD1898T100Q
Public Made by Adomby adom
ROHM Semicon Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Made with KiCad 10.0 · needs KiCad 10.0 or later to open · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 4d ago |
| viewers | 4d ago |
| 2sd1898t100q-etched.glb | 4d ago |
| 2sd1898t100q-etched.step | 4d ago |
| 2sd1898t100q-hero.glb | 4d ago |
| 2sd1898t100q-hero.overlay.json | 4d ago |
| 2sd1898t100q.glb | 4d ago |
| 2sd1898t100q.kicad_mod | 4d ago |
| 2sd1898t100q.kicad_sym | 4d ago |
| 2sd1898t100q.lbr | 4d ago |
| 2sd1898t100q.step | 4d ago |
| package.json | 4d ago |
| page.json | 4d ago |
| README.md | 4d ago |
2SD1898T100Q
ROHM Semicon · Bipolar (BJT) · SOT-89
2SD1898T100Q from ROHM Semicon, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor, driven with IB = 20 mA for VCE(sat) = 0.4 V max at IC = 500 mA, with VEBO limit of 5 V. |
| 2 | C | passive | Collector (also the wide center tab), with VCEO of 80 V, VCBO of 120 V and IC of 1.0 A DC (2.0 A pulsed). |
| 3 | E | passive | Emitter of the NPN transistor, the common return for the collector and base currents, with VEBO limit of 5 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC current gain | hFE | 120 | 390 | VCE = 3V, IC = 0.5A (pulsed, *6) | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.4 | V | IC = 500mA, IB = 20mA | 2 | ||
| Collector-base breakdown voltage | BVCBO | 120 | V | IC = 50mA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 80 | V | IC = 1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE = 50mA | 2 | ||
| Emitter cut-off current | IEBO | 1 | mA | VEB = 4V | 2 | ||
| Collector-base voltage | VCBO | 120 | V | 2 | |||
| Collector-emitter voltage | VCEO | 80 | V | 2 | |||
| Emitter-base voltage | VEBO | 5 | V | 2 | |||
| Collector current DC | IC | 1 | A | DC | 2 | ||
| Collector current pulsed | ICP | 2 | A | Pw=20ms, duty=1/2 (*1) | 2 | ||
| Power dissipation | PD | 0.5 | W | Each terminal mounted on a reference land (*2) | 2 | ||
| Power dissipation | PD | 1 | W | Mounted on a substrate (*4) | 2 | ||
| Junction temperature | Tj | 150 | °C | 2 | |||
| Range of storage temperature | Tstg | -55 | 150 | °C | 2 |
CAD (KiCad official)
- Symbol:
2SD1898T100Q - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1898t100q-etched.step/2sd1898t100q-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1898t100q.step/2sd1898t100q.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (8 pp, sha256
5be3527c5de83d09, retrieved 2026-10-20, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).