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2SD1816L-S-TN3-R

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UTC(Unisonic Tech) Bipolar Transistors - BJT, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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2SD1816L-S-TN3-R

UTC(Unisonic Tech) · Bipolar Transistors - BJT · TO-252

2SD1816L-S-TN3-R from UTC(Unisonic Tech), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; drives the device with IB=0.2A for IC=2A saturation conditions and VEBO limit of 6 V.
2 C passive Collector of the NPN transistor; VCBO 120 V, VCEO 100 V, collector current 4 A DC and 8 A pulse.
3 E passive Emitter of the NPN transistor; VEBO maximum 6 V relative to the base.

Key specifications

Parameter Value
Manufacturer UTC(Unisonic Tech)
Package TO-252
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Base Voltage VCBO 120 V TA=25°C 2
Collector-Emitter Voltage VCEO 100 V TA=25°C 2
Emitter-Base Voltage VEBO 6 V TA=25°C 2
Collector Current DC IC 4 A DC 2
Collector Current Pulse IC 8 A PULSE, Duty=1/2, Pw=20ms 2
Collector Power Dissipation PD 1 W TO-251/TO-252 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -40 150 °C 2
Collector Base Breakdown Voltage BVCBO 120 V IC=10μA, IE=0 2
Collector Emitter Breakdown Voltage BVCEO 100 V IC=1mA, RB=∞ 2
Emitter Base Breakdown Voltage BVEBO 6 V IE=10μA, IC=0 2
Base-Emitter Saturation Voltage VBE(SAT) 0.9 1.2 V IC=2A, IB=0.2A 2
Collector-Emitter Saturation Voltage VCE(SAT) 150 400 mV IC=2A, IB=0.2A 2
Collector Cut-Off Current ICBO 1 μA VCB=100V, IE=0 2
Emitter Cut-Off Current IEBO 1 μA VEB=4V, IC=0 2
DC Current Transfer Ratio hFE1 (rank S) hFE1 140 280 VCE=5V, IC=0.5A 2
DC Current Transfer Ratio hFE2 hFE2 40 VCE=5V, IC=3A 2
Transition Frequency fT 180 MHz VCE=10V, IC=0.5A 2
Output Capacitance Cob 40 pF VCB=10V, IE=0A, f=1MHz 2
Turn-on Time tON 100 ns See test circuit 2
Storage Time tSTG 900 ns See test circuit 2
Fall Time tF 50 ns See test circuit 2

CAD (KiCad official)

  • Symbol: 2SD1816L-S-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 2sd1816l-s-tn3-r-etched.step / 2sd1816l-s-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1816l-s-tn3-r.step / 2sd1816l-s-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC(Unisonic Tech) datasheet (5 pp, sha256 1540cede4c6af774, retrieved 2026-10-22, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF