# 2SD1815

**Changjing** · Bipolar (BJT) · TO-252-2L

2SD1815 from Changjing, in a TO-252-2L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the NPN transistor, driven with IB1 = -0.15 A in the switching test and tied to VBE(sat) of 1.2 V at IC = 1.5 A, IB = 150 mA. |
| 2 | COLLECTOR | passive | Collector terminal, rated for VCBO 120 V, VCEO 100 V and 3 A continuous collector current, with a maximum collector power dissipation of 1 W. |
| 3 | EMITTER | passive | Emitter terminal, referenced by the emitter-base rating VEBO of 6 V and the emitter-base breakdown test at IE = 10 µA. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Changjing |
| Package | TO-252-2L |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | 120 |  |  | V | IC=10μA, IE=0 | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | 100 |  |  | V | IC=1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | 6 |  |  | V | IE=10μA, IC=0 | 1 |
| Collector cut-off current | ICBO |  |  | 1 | μA | VCB=100V, IE=0 | 1 |
| Emitter cut-off current | IEBO |  |  | 1 | μA | VEB=4V, IC=0 | 1 |
| DC current gain hFE(1) | hFE(1) | 70 |  | 400 |  | VCE=5V, IC=500mA | 1 |
| DC current gain hFE(2) | hFE(2) | 40 |  |  |  | VCE=5V, IC=2A | 1 |
| Collector-emitter saturation voltage | VCE(sat) |  |  | 0.4 | V | IC=1.5A, IB=150mA | 1 |
| Base-emitter saturation voltage | VBE(sat) |  |  | 1.2 | V | IC=1.5A, IB=150mA | 1 |
| Collector-base voltage | VCBO |  |  | 120 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | 100 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | 6 | V |  | 1 |
| Collector current - continuous | IC |  |  | 3 | A |  | 1 |
| Collector power dissipation | PC |  |  | 1 | W |  | 1 |
| Junction temperature | TJ |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `2SD1815`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252-2L (KiCad packages3D, STEP)
- 3D model files: `2sd1815-etched.step` / `2sd1815-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1815.step` / `2sd1815.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Changjing datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586203356310212608) (3 pp, sha256 `24bf4481068189a8`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2sd1815-datasheet.pdf)