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2SD1804L-T-TN3-R

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UTC Unisonic Tech Bipolar (BJT), TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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2SD1804L-T-TN3-R

UTC Unisonic Tech · Bipolar (BJT) · TO-252

2SD1804L-T-TN3-R from UTC Unisonic Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B passive Base terminal of the NPN transistor, per the pin assignment for the TO-252 package (B C E).
2 C passive Collector terminal of the NPN transistor, per the pin assignment for the TO-252 package (B C E); the datasheet gives a maximum collector current of 8 A (12 A pulse) and collector dissipation of 1 W at TA=25°C for TO-251/TO-252.
3 E passive Emitter terminal of the NPN transistor, per the pin assignment for the TO-252 package (B C E).

Key specifications

Parameter Value
Manufacturer UTC Unisonic Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector Dissipation (TO-251/TO-252, TA=25°C) PD 1 W TA=25°C, TO-251/TO-252 2
Collector Dissipation (TO-251/TO-252, TC=25°C) PD 20 W TC=25°C, TO-251/TO-252 2
Collector-Base Voltage VCBO 60 V TA=25°C, unless otherwise specified 2
Collector-Emitter Voltage VCEO 50 V TA=25°C, unless otherwise specified 2
Emitter-Base Voltage VEBO 6 V TA=25°C, unless otherwise specified 2
Collector Current IC 8 A TA=25°C, unless otherwise specified 2
Collector Current (PULSE) IC(PULSE) 12 A TA=25°C, unless otherwise specified 2
Junction Temperature TJ 150 °C 2
Storage Temperature TSTG -55 150 °C 2
Collector-Base Breakdown Voltage BVCBO 60 V IC=10μA, IE=0 2
Collector-Emitter Breakdown Voltage BVCEO 50 V IC=1mA, RBE= 2
Emitter-Base Breakdown Voltage BVEBO 6 V IE=10μA, IC=0 2
Collector Cutoff Current ICBO 1 μA VCB=40V, IE=0 2
Emitter Cutoff Current IEBO 1 μA VEB=4V, IC=0 2
DC Current Gain (hFE1) hFE1 70 400 VCE=2V, IC=0.5A 2
DC Current Gain (hFE2) hFE2 35 VCE=2V, IC=6A 2
Collector-Emitter Saturation Voltage VCE(SAT) 200 400 mV IC=4A, IB=0.2A 2
Base-Emitter Saturation Voltage VBE(SAT) 0.95 1.3 V IC=4A, IB=0.2A 2
Gain-Bandwidth Product fT 180 MHz VCE=5V, IC=1A 2
Output Capacitance Cob 65 pF VCE=10V, f=1MHz 2
Storage Time tSTG 500 ns See test circuit 2
Fall Time tF 20 ns See test circuit 2

CAD (KiCad official)

  • Symbol: 2SD1804L-T-TN3-R
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: 2sd1804l-t-tn3-r-etched.step / 2sd1804l-t-tn3-r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1804l-t-tn3-r.step / 2sd1804l-t-tn3-r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: UTC Unisonic Tech datasheet (5 pp, sha256 9cd3a7c509413bda, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF