component

2SD1782R

Public Made by Adom

by adom

Slkor SLKORMICRO Elec Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristors2sd1782rfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity

3D Model

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Symbol & Footprint

Schematic Symbol

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

PCB Footprint

Open full view ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.

Datasheet

Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Download PDF
Contents

README

markdown

2SD1782R

Slkor SLKORMICRO Elec · Bipolar (BJT) · SOT-23

2SD1782R from Slkor SLKORMICRO Elec, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Base input Base terminal of the NPN transistor; the datasheet rates VEBO at 5 V and gives VBE(sat) at 1.2 V max with IC = 500 mA and IB = 50 mA.
2 Emitter passive Emitter terminal of the NPN transistor; absolute maximum ratings are VEBO 5 V and collector current IC 500 mA.
3 Collector passive Collector terminal of the NPN transistor; absolute maximum ratings are VCBO 80 V, VCEO 80 V, IC 500 mA and maximum power dissipation PD 200 mW.

Key specifications

Parameter Value
Manufacturer Slkor SLKORMICRO Elec
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
DC Current Gain (Gain Group R) HFE 180 390 VCE = 3 V, IC = 100 mA 2
Collector Base Cutoff Current ICBO 500 nA VCB = 50 V 2
Emitter Base Cutoff Current IEBO 500 nA VEB = 4 V 2
Collector Base Breakdown Voltage V(BR)CBO 80 V IC = 50 μA 2
Collector Emitter Breakdown Voltage V(BR)CEO 80 V IC = 2 mA 2
Emitter Base Breakdown Voltage V(BR)EBO 5 V IE = 50 μA 2
Collector Emitter Saturation Voltage VCE(sat) 0.5 V IC = 500 mA, IB = 50 mA 2
Base Emitter Saturation Voltage VBE(sat) 1.2 V IC = 500 mA, IB = 50 mA 2
Collector Base Voltage VCBO 80 V 1
Collector Emitter Voltage VCEO 80 V 1
Emitter Base Voltage VEBO 5 V 1
Collector Current IC 500 mA 1
Maximum Power Dissipation PD 200 mW 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 2SD1782R
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2sd1782r-etched.step / 2sd1782r-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1782r.step / 2sd1782r.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Slkor SLKORMICRO Elec datasheet (5 pp, sha256 0f42fe6fdc136b56, retrieved 2026-10-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF