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2SD1782-RQ

Public Made by Adom

by adom

Yangzhou Yangjie Elec Tech Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs Publish 0.1.0 · Ray 15d ago
viewers 2sd1782-rq: viewers · Ray 15d ago
2sd1782-rq-etched.glb 2sd1782-rq: factory component page (tier=lcsc) · Ray 15d ago
2sd1782-rq-etched.step 2sd1782-rq: factory component page (tier=lcsc) · Ray 15d ago
2sd1782-rq-hero.glb 2sd1782-rq: hero GLB from the etched model (keeps the MPN mark) · Ray 15d ago
2sd1782-rq-hero.overlay.json Publish 0.1.0 · Ray 15d ago
2sd1782-rq.glb Publish 0.1.0 · Ray 15d ago
2sd1782-rq.kicad_mod Publish 0.1.0 · Ray 15d ago
2sd1782-rq.kicad_sym Publish 0.1.0 · Ray 15d ago
2sd1782-rq.lbr Publish 0.1.0 · Ray 15d ago
2sd1782-rq.step Publish 0.1.0 · Ray 15d ago
package.json Publish 0.1.0 · Ray 15d ago
page.json 2sd1782-rq: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 9d ago
README.md 2sd1782-rq: specified limits as data (metadata.characteristics, 16 rows from the datasheet) · Ray 9d ago

2SD1782-RQ

Yangzhou Yangjie Elec Tech · Bipolar (BJT) · SOT-23

2SD1782-RQ from Yangzhou Yangjie Elec Tech, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base voltage limited to 5 V (VEBO) and IEBO max 0.5 uA at VEB=4 V.
2 E passive Emitter of the NPN transistor; continuous collector current is limited to 500 mA.
3 C passive Collector of the NPN transistor; VCEO and VCBO are 80 V max, with continuous IC of 500 mA and PD of 200 mW.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage VCBO 80 V IC= 50uA, IE=0 1
Collector-emitter breakdown voltage VCEO 80 V IC= 2mA, IB=0 1
Emitter-base breakdown voltage VEBO 5 V IE= 50uA, IC=0 1
Collector-base cut-off current ICBO 0.5 uA VCB=50V, IE =0 1
Emitter-base cut-off current IEBO 0.5 uA VEB=4 V , IC=0 1
DC current gain hFE 180 390 VCE= 3V, IC= 100mA 1
Collector-emitter saturation voltage VCE(sat) 0.5 V IC=500mA, IB= 50mA 1
Base-emitter saturation voltage VBE(sat) 1.2 V IC=500mA, IB= 50mA 1
Transition frequency fT 180 MHz VCE=10V,IC=50mA,f=100MHz 2
Collector-base voltage VCBO 80 V Ta=25℃ 1
Collector-emitter voltage VCEO 80 V Ta=25℃ 1
Emitter-base voltage VEBO 5 V Ta=25℃ 1
Collector current -continuous IC 500 mA Ta=25℃ 1
Total device dissipation PD 200 mW Ta=25℃ 1
Junction temperature Tj -55 150 ℃ 1
Storage temperature TSTG -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 2SD1782-RQ
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2sd1782-rq-etched.step / 2sd1782-rq-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2sd1782-rq.step / 2sd1782-rq.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (5 pp, sha256 61b59f77a4f1647c, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF