component
2SD1766U
Public Made by Adomby adom
CBI Bipolar (BJT), SOT-89. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
Open in new tab ↗
Loads when you scroll to it. Unloads after 5 minutes in the background.
Symbol & Footprint
Schematic Symbol
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
PCB Footprint
Open full view ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
Datasheet
Open in new tab ↗Loads when you scroll to it. Unloads after 5 minutes in the background.
README
markdown2SD1766U
CBI · Bipolar (BJT) · SOT-89
2SD1766U from CBI, in a SOT-89. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | B | input | Base of the NPN transistor; VEBO max 5 V and IEBO max 1 µA at VEB = 4 V. |
| 2 | C | passive | Collector; IC max 2 A (ICP 2.5 A single pulse, Pw = 20 ms), VCBO 40 V, VCEO 32 V. |
| 3 | E | passive | Emitter of the NPN transistor. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | CBI |
| Package | SOT-89 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| DC Current Gain, Group P | hFE | 82 | 180 | at VCE = 3 V, IC = 500 mA | 1 | ||
| DC Current Gain, Group Q | hFE | 120 | 270 | at VCE = 3 V, IC = 500 mA | 1 | ||
| DC Current Gain, Group R | hFE | 180 | 390 | at VCE = 3 V, IC = 500 mA | 1 | ||
| Collector Base Cutoff Current | ICBO | 1 | µA | at VCB = 20 V | 1 | ||
| Emitter Base Cutoff Current | IEBO | 1 | µA | at VEB = 4 V | 1 | ||
| Collector Base Breakdown Voltage | V(BR)CBO | 40 | V | at IC = 50 µA | 1 | ||
| Collector Emitter Breakdown Voltage | V(BR)CEO | 32 | V | at IC = 1 mA | 1 | ||
| Emitter Base Breakdown Voltage | V(BR)EBO | 5 | V | at IE = 50 µA | 1 | ||
| Collector Emitter Saturation Voltage | VCE(sat) | 0.8 | V | at IC = 2 A, IB = 200 mA | 1 | ||
| Transition Frequency | fT | 100 | MHz | at VCE = 5 V, -IE = 500 mA, f = 100 MHz | 1 | ||
| Collector Base Capacitance | Cob | 30 | pF | at VCB = 10 V, f = 1 MHz | 1 | ||
| Collector Base Voltage | VCBO | 40 | V | 1 | |||
| Collector Emitter Voltage | VCEO | 32 | V | 1 | |||
| Emitter Base Voltage | VEBO | 5 | V | 1 | |||
| Collector Current | IC | 2 | A | 1 | |||
| Peak Collector Current | ICP | 2.5 | A | Single pulse, Pw = 20 ms | 1 | ||
| Collector Power Dissipation | PC | 0.5 | W | 1 | |||
| Collector Power Dissipation (mounted on ceramic board) | PC | 2 | W | When mounted on a 40 X 40 X 0.7 mm ceramic board | 1 | ||
| Junction Temperature | Tj | 150 | °C | 1 | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | 1 |
CAD (KiCad official)
- Symbol:
2SD1766U - Footprint:
Package_TO_SOT_SMD:SOT-89-3 - 3D model: SOT-89 (KiCad packages3D, STEP)
- 3D model files:
2sd1766u-etched.step/2sd1766u-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1766u.step/2sd1766u.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: CBI datasheet (3 pp, sha256
e2169380f3eac9d1, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).