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2SD1760TLR
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ROHM Semicon MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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2SD1760TLR
ROHM Semicon · MOSFETs · TO-252
2SD1760TLR from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor; VEBO max 5 V, with VCE(sat) 0.5 V typ at IC/IB = 2A/0.2A. |
| 2 | C | passive | Collector; VCBO 60 V, VCEO 50 V, IC 3 A DC (4.5 A pulse), PC 1 W (15 W at Tc=25°C). |
| 3 | Emitter | passive | Emitter of the NPN transistor; VEBO max 5 V relative to base. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | V | IC=50µA | 2 | ||
| Collector-emitter breakdown voltage | BVCEO | 50 | V | IC=1mA | 2 | ||
| Emitter-base breakdown voltage | BVEBO | 5 | V | IE=50µA | 2 | ||
| Collector cutoff current | ICBO | 1 | µA | VCB=40V | 2 | ||
| Emitter cutoff current | IEBO | 1 | µA | VEB=4V | 2 | ||
| DC current transfer ratio | hFE | 82 | 390 | VCE=3V, IC=0.5A | 2 | ||
| Collector-emitter saturation voltage | VCE(sat) | 0.5 | 1 | V | IC/IB=2A/0.2A | 2 | |
| Transition frequency | fT | 90 | MHz | VCE=5V, IE=-500mA, f=30MHz | 2 | ||
| Output capacitance | Cob | 40 | pF | VCB=10V, IE=0A, f=1MHz | 2 | ||
| Collector-base voltage | VCBO | 60 | V | Ta=25°C | 1 | ||
| Collector-emitter voltage | VCEO | 50 | V | Ta=25°C | 1 | ||
| Emitter-base voltage | VEBO | 5 | V | Ta=25°C | 1 | ||
| Collector current (DC) | IC | 3 | A | DC, Ta=25°C | 1 | ||
| Collector current (Pulse) | IC | 4.5 | A | Single pulse, PW=100ms | 1 | ||
| Junction temperature | Tj | 150 | °C | Ta=25°C | 1 | ||
| Storage temperature | Tstg | -55 | 150 | °C | Ta=25°C | 1 |
CAD (KiCad official)
- Symbol:
2SD1760TLR - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
2sd1760tlr-etched.step/2sd1760tlr-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2sd1760tlr.step/2sd1760tlr.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ROHM Semicon datasheet (3 pp, sha256
2561de5e9c995f39, retrieved 2026-10-23, tier: manufacturer) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# 2SD1760TLR
**ROHM Semicon** · MOSFETs · TO-252
2SD1760TLR from ROHM Semicon, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | Base | input | Base of the NPN transistor; VEBO max 5 V, with VCE(sat) 0.5 V typ at IC/IB = 2A/0.2A. |
| 2 | C | passive | Collector; VCBO 60 V, VCEO 50 V, IC 3 A DC (4.5 A pulse), PC 1 W (15 W at Tc=25°C). |
| 3 | Emitter | passive | Emitter of the NPN transistor; VEBO max 5 V relative to base. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ROHM Semicon |
| Package | TO-252 |
| Category | Transistors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | BVCBO | 60 | | | V | IC=50µA | 2 |
| Collector-emitter breakdown voltage | BVCEO | 50 | | | V | IC=1mA | 2 |
| Emitter-base breakdown voltage | BVEBO | 5 | | | V | IE=50µA | 2 |
| Collector cutoff current | ICBO | | | 1 | µA | VCB=40V | 2 |
| Emitter cutoff current | IEBO | | | 1 | µA | VEB=4V | 2 |
| DC current transfer ratio | hFE | 82 | | 390 | | VCE=3V, IC=0.5A | 2 |
| Collector-emitter saturation voltage | VCE(sat) | | 0.5 | 1 | V | IC/IB=2A/0.2A | 2 |
| Transition frequency | fT | | 90 | | MHz | VCE=5V, IE=-500mA, f=30MHz | 2 |
| Output capacitance | Cob | | 40 | | pF | VCB=10V, IE=0A, f=1MHz | 2 |
| Collector-base voltage | VCBO | | | 60 | V | Ta=25°C | 1 |
| Collector-emitter voltage | VCEO | | | 50 | V | Ta=25°C | 1 |
| Emitter-base voltage | VEBO | | | 5 | V | Ta=25°C | 1 |
| Collector current (DC) | IC | | | 3 | A | DC, Ta=25°C | 1 |
| Collector current (Pulse) | IC | | | 4.5 | A | Single pulse, PW=100ms | 1 |
| Junction temperature | Tj | | | 150 | °C | Ta=25°C | 1 |
| Storage temperature | Tstg | -55 | | 150 | °C | Ta=25°C | 1 |
## CAD (KiCad official)
- Symbol: `2SD1760TLR`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `2sd1760tlr-etched.step` / `2sd1760tlr-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2sd1760tlr.step` / `2sd1760tlr.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [ROHM Semicon datasheet](docs/2sd1760tlr-datasheet.pdf) (3 pp, sha256 `2561de5e9c995f39`, retrieved 2026-10-23, tier: manufacturer)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/2sd1760tlr-datasheet.pdf)